Dr.- Ing. Martin Mikulics

Scientific staff at ER-C-2

Forschungsthemen

Applied Nanomaterials

Kontakt

+49 2461/61-5399

E-Mail

ORCID

Adresse

Forschungszentrum Jülich GmbH
Wilhelm-Johnen-Straße
52428 Jülich

Ernst Ruska-Centrum für Mikroskopie und Spektroskopie mit Elektronen (ER-C)

Materialwissenschaft und Werkstofftechnik (ER-C-2)

Gebäude 05.7 / Raum 2010

Sie können uns hier finden

Warum und woran ich forsche

Expertise and Research Interests

The Applied Nanomaterials group focuses on the characterization of nanomaterials for different applications such as in the fields of information technology and energy.

Expertise

THz photomixers, femtosecond und picosecond photodetectors and photoswitches, group III – group V semiconductor and group III-nitride nanostructures, HEMTs (High Electron Mobility Transistors), nano-LEDs
Optoelectronic and structural characterization of nanostructures and devices
Development of novel device concepts and processes for green IT
Correlative investigation of functional (especially with Raman / photoluminescence) characteristics with atomic structure (electron microscopy)

Vita

Research/Work experience:

since October 2019	Staff scientist at the Ernst Ruska-Centre (ER-C2), director Prof. Joachim Mayer Forschungszentrum Jülich GmbH (FZJ), in the group of Dr. Hilde Hardtdegen “Applied Nanomaterials”.
2007–2019	Post-doctoral position and staff scientist at the Institute of Bio- and Nanosystems (IBN-1) and Peter Grünberg Institute (PGI-9), director Prof. Detlev Grützmacher, FZJ Jülich in the groups of Prof. Michel Marso, Dr. Hilde Hardtdegen and Prof. Thomas Schäpers.
2005–2006	Post-doctoral position at the Institute of High Frequency Technology, director Prof. Martin Koch, Technical University Carolo-Wilhelmina at Braunschweig, THz Systems Group.
2004–2005	Post-doctoral position (scholarship) at the Max-Planck Institute for Radioastronomy Bonn, director Prof. Rolf Güsten and at the Institute of Thin Films and Interfaces, ISG1, director Prof. Hans Lüth, FZJ Jülich in the framework of “Sources of THz Radiation based on LT GaAs Photomixer Technology”.
April–June 2003	Visiting scientist at the Laboratory for Laser Energetics, director Prof. Roman Sobolewski, University of Rochester, Rochester USA.
June–October 2000	Visiting scientist at the Ion Beam Laboratory, Prof. Peter Kováč, Slovak University of Technology, Bratislava.
1995–1999	Student assistant at the Ion Beam Laboratory, Department of Nuclear Physics and Technology, Faculty of Electrical Engineering and Information Technology, Prof. Peter Kováč, Slovak University of Technology, Bratislava, Slovak Republic. Tasks: implantation, RBS, PIXE, NRA, in the framework of “High Energy Implantation To Hot Substrates”.
1997–1999	Student assistant at the High Voltage Laboratory, Department of Material Science and Technology, Prof. Jaroslav Lelák, Slovak University of Technology in Bratislava, Slovak Republic. Tasks: high voltage characterization and material testing, breakdown measurements, degradation and reliability (high voltage cables).
1997–1998	Student assistant at the Department of Material Science and Technology, Slovak University of Technology, Prof. Anna Grusková Bratislava, Slovak Republic. Tasks: preparation, optimization and characterization of BaTiO₃ and SrTiO₃ by ceramic methods.

Education

July 6^th 2004	PhD defense at the Fakultät für Elektrotechnik und Informationstechnik der Rheinisch-Westfälischen Technischen Hochschule Aachen, PhD thesis: “Preparation and Optimization of Low-Temperature-Grown GaAs Photomixers“.
2000–2003	Doctoral researcher at the Institute of Thin Films and Interfaces, ISG1, director Prof. Hans Lüth (supervisor), Research Centre Jülich, advisor Prof. Peter Kordoš, and at the Max-Planck Institute for Radioastronomy (scholarship), Bonn, Germany, director Prof. Rolf Güsten.
1999–2000	Diploma in Electrical Engineering, thesis: “Preparation and properties of GaAs photodetectors” at the Institute of Thin Films and Ion Techniques, ISI, director Prof. Hans Lüth, Research Centre Jülich, advisor Prof. Peter Kordoš.
1994–2000	Bachelor and Master studies at the Slovak University of Technology in Bratislava, Slovak Republic, Faculty of Electrical Engineering and Information Technology, State Exam in Nuclear Electronics and Techniques (1997), Degree in Material Science (grade A) with distinction and Rector Award (June 2000).

Patents/granted

Photodetektor und Verfahren zu seiner Herstellung	M. Mikulics, M. Marso, P. Kordoš DEU patent: DE112004001156B4 (2009)
High frequency conductor having improved conductivity	M. Mikulics, H. Hardtdegen, D. Grützmacher US patent: US9735247B2 (2017) EP patent: EP2987179B1 (2017) JP patent: JP6244450B2 (2017) CN patent: CN105493246B (2018)
Method for optical transmission of a structure into a recording medium	M. Mikulics and H. Hardtdegen US patent: US9798237B2 (2017) EP patent: EP2885677B1 (2016) JP patent: JP6177912B2 (2017) CN patent: CN104662477B (2017) KR patent: KR102191802B1 (2020)
Single-photon source suitable for mass production and production method	M. Mikulics and H. Hardtdegen US patent: US10074771B2 (2018) EP patent: EP2936628B1 (2017) JP patent: JP6244371B2 (2017) CN patent: CN105379033B (2018) KR patent: KR102283165B1 (2021)
Component having optically active materials	M. Mikulics and H. Hardtdegen US patent: US11521681B2 (2022) JP patent: JP7461349B2 (2024) KR patent: KR102704598B1 (2024)

Patents/applications

Bauelementstruktureinheit	M. Mikulics and H. Hardtdegen PCT: WO2021115507A1 (2021)
Vorrichtung für photoneninduzierte Prozesse und/oder Modifikationen von Materialien	M. Mikulics, H. Hardtdegen and J. Mayer EP4137229A1 (2022)

Publikationen

Selected Publications

FZJ-2025-01938

[1] J. Reimers, M. Mikulics, M. Lipinska-Chwalek, B. Zeller-Plumhoff, L. Kibkalo, M. Kruth, R. Willumeit-Römer, J. Mayer, H.H. Hardtdegen, Towards Correlative Raman Spectroscopy–STEM Investigations Performed on a Magnesium–Silver Alloy FIB Lamella, Nanomaterials. 15 (2025) 430. https://doi.org/10.3390/nano15060430.

FZJ-2025-01776

[2] L. Ahrens, M. Mikulics, S. Schröder, J. Mayer, H.H. Hardtdegen, Laser-Micro-Annealing of Microcrystalline Ni-Rich NCM Oxide: Towards Micro-Cathodes Integrated on Polyethylene Terephthalate Flexible Substrates, Materials (Basel). 18 (2025) 680. https://doi.org/10.3390/ma18030680.

FZJ-2023-03120

[3] M. Mikulics, R. Adam, G. Chen, D. Chakraborty, J. Cheng, A. Pericolo, I. Komissarov, D.E. Bürgler, S.F. Heidtfeld, J. Serafini, S. Preble, R. Sobolewski, C.M. Schneider, J. Mayer, H.H. Hardtdegen, Determination of thermal damage threshold in THz photomixers using Raman spectroscopy, Crystals. 13 (2023) 1267. https://doi.org/10.3390/cryst13081267.

FZJ-2022-05598

[4] M. Mikulics, R. Adam, Roman Sobolewski, S. Heidtfeld, D. Cao, D.E. Bürgler, C.M. Schneider, J. Mayer, H.H. Hardtdegen, Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations, FlatChem. 36 (2022) 100447. https://doi.org/10.1016/j.flatc.2022.100447.

FZJ-2022-01764

[5] M. Mikulics, J. Mayer, H.H. Hardtdegen, Cutting-edge nano-LED technology, J. Appl. Phys. 131 (2022) 110903. https://doi.org/10.1063/5.0087279.

FZJ-2021-03351

[6] M. Mikulics, P. Kordoš, D. Gregušová, Š. Gaži, J. Novák, Z. Sofer, J. Mayer, H. Hardtdegen, Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer, Semicond. Sci. Technol. 36 (2021) 095040. https://doi.org/10.1088/1361-6641/ac1a28.

FZJ-2020-04181

[7] M. Mikulics, H.H. Hardtdegen, Fully photon operated transmistor / all-optical switch based on a layered Ge1Sb2Te4 phase change medium, FlatChem. 23 (2020) 100186. https://doi.org/10.1016/j.flatc.2020.100186.

[FZJ-2020-02184]

[8] M. Mikulics, J.G. Lu, L. Huang, P.L. Tse, J.Z. Zhang, J. Mayer, H. Hardtdegen, Laser micro annealing conditioning for the suppression of statistical scatter in freestanding Sb2Te3 nanowire resistance, FlatChem. 21 (2020) 100164. https://doi.org/10.1016/j.flatc.2020.100164.

[9] M. Mikulics, P. Kordoš, A. Fox, M. Kočan, H. Lüth, Z. Sofer, H. Hardtdegen, Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate, Appl. Mater. Today. 7 (2017) 134–137. https://doi.org/10.1016/j.apmt.2017.02.008.

FZJ-2016-02325

[10] H. Hardtdegen, S. Rieß, M. Schuck, K. Keller, P. Jost, H. Du, M. Bornhöfft, A. Schwedt, G. Mussler, M. v. d. Ahe, J. Mayer, G. Roth, D. Grützmacher, M. Mikulics, A model structure for interfacial phase change memories: Epitaxial trigonal Ge1Sb2Te4, J. Alloys Compd. 679 (2016) 285–292. https://doi.org/10.1016/j.jallcom.2016.04.013.

[FZJ-2016-01617]

[11] M. Mikulics, Y.C. Arango, A. Winden, R. Adam, A. Hardtdegen, D. Grützmacher, E. Plinski, D. Gregušová, J. Novák, P. Kordoš, A. Moonshiram, M. Marso, Z. Sofer, H. Lüth, H. Hardtdegen, Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes, Appl. Phys. Lett. 108 (2016) 061107. https://doi.org/10.1063/1.4941923.

[FZJ-2016-04012]

[12] M. Mikulics, A. Winden, M. Marso, A. Moonshiram, H. Lüth, D. Grützmacher, H. Hardtdegen, Nano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics, Appl. Phys. Lett. 109 (2016) 041103. https://doi.org/10.1063/1.4960007.

[13] M. Mikulics, H. Hardtdegen, Nano-LED array fabrication suitable for future single photon lithography, Nanotechnology. 26 (2015) 185302. https://doi.org/10.1088/0957-4484/26/18/185302.

[FZJ-2014-05595]

[14] M. Mikulics, H. Hardtdegen, Y.C. Arango, R. Adam, A. Fox, D. Grützmacher, D. Gregušová, S. Stanček, J. Novák, P. Kordoš, Z. Sofer, L. Juul, M. Marso, Reduction of skin effect losses in double-level-T-gate structure, Appl. Phys. Lett. 105 (2014) 232102. https://doi.org/10.1063/1.4903468.

[15] M. Mikulics, J. Zhang, J. Serafini, R. Adam, D. Grützmacher, R. Sobolewski, Subpicosecond electron-hole recombination time and terahertz-bandwidth photoresponse in freestanding GaAs epitaxial mesoscopic structures, Appl. Phys. Lett. 101 (2012) 031111. https://doi.org/10.1063/1.4737442.

[16] M. Mikulics, P. Kordos, D. Gregusova, R. Adam, M. Kocan, S. Wu, J. Zhang, R. Sobolewski, D. Grutzmacher, M. Marso, Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System, IEEE Photonics Technol. Lett. 23 (2011) 1189–1191. https://doi.org/10.1109/LPT.2011.2157816.

[17] M. Mikulics, R. Adam, Z. Sofer, H. Hardtdegen, S. Stanček, J. Knobbe, M. Kočan, J. Stejskal, D. Sedmidubský, M. Pavlovič, V. Nečas, D. Grützmacher, M. Marso, Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates, Semicond. Sci. Technol. 25 (2010) 075001. https://doi.org/10.1088/0268-1242/25/7/075001.

[18] M. Mikulics, R. Stoklas, A. Dadgar, D. Gregušová, J. Novák, D. Grützmacher, A. Krost, P. Kordoš, InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN, Appl. Phys. Lett. 97 (2010) 173505. https://doi.org/10.1063/1.3507885.

[19] M. Mikulics, E.A. Michael, M. Marso, M. Lepsa, A. van der Hart, H. Lüth, A. Dewald, S. Stanček, M. Mozolik, P. Kordoš, Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs, Appl. Phys. Lett. 89 (2006) 071103. https://doi.org/10.1063/1.2337523.

[20] M. Mikulics, M. Marso, P. Javorka, P. Kordoš, H. Lüth, M. Kočan, A. Rizzi, S. Wu, R. Sobolewski, Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN, Appl. Phys. Lett. 86 (2005) 211110. https://doi.org/10.1063/1.1938004.

[21] M. Mikulics, M. Marso, P. Kordoš, S. Stanček, P. Kováč, X. Zheng, S. Wu, R. Sobolewski, Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-implanted GaAs, Appl. Phys. Lett. 83 (2003) 1719. https://doi.org/10.1063/1.1606879.

Letzte Änderung: 19.03.2025