Publikationen 2016

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Realization of Minimum and Maximum Gate Function in Ta$_{2}$O$_{5}$-based Memristive Devices
Scientific reports 6, 23967 - () [10.1038/srep23967] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Physical Deposition Techniques
Memristive Phenomena - From Fundamental to Neuromorphic Computing Jülich : Forschungszentrum Jülich () BibTeX | EndNote: XML, Text | RIS

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Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices
ESSDERC 2016 - 46th European Solid-State Device Research Conference, LausanneLausanne, Switzerland, 12 Sep 2016 - 15 Sep 20162016-09-122016-09-15 IEEE 160 pp. () [10.1109/ESSDERC.2016.7599611]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides
Physical review applied 6(6), 064015 () [10.1103/PhysRevApplied.6.064015] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Multidimensional Simulation of Threshold Switching in NbO$_{2}$ Based on an Electric Field Triggered Thermal Runaway Model
Advanced electronic materials 2(7), 1600169 - () [10.1002/aelm.201600169]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Tuning the Performance of Pt/HfO2/Ti/Pt ReRAM Devices Obtained from Plasma-Enhanced Atomic Layer Deposition for HfO2 Thin Films
Pennington, NJ, ECS transactions 75, 177 - 184 () [10.1149/07506.0177ecst]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series
2016 IEEE International Memory Workshop (IMW), ParisParis, France, 15 May 2016 - 18 May 20162016-05-152016-05-18 [10.1109/IMW.2016.7495280]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series
International Memory Workshop, ParisParis, France, 15 May 2016 - 20 May 20162016-05-152016-05-20 BibTeX | EndNote: XML, Text | RIS

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Chemical Vapour Deposition Techniques
Memristive Phenomena - From Fundamental to Neuromorphic Computing Jülich : Forschungszentrum 339 pp. () BibTeX | EndNote: XML, Text | RIS

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Impact of oxygen exchange reaction at the ohmic interface in Ta$_{2}$ O$_{5}$ -based ReRAM devices
Nanoscale 8(41), 17774 - 17781 () [10.1039/C6NR03810G]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Nonlinearity analysis of TaOX redox-based RRAM
Microelectronic engineering 154, 38 - 41 () [10.1016/j.mee.2016.01.025]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices
IEDM2016, BostonBoston, USA, 4 Dec 2016 - 9 Dec 20162016-12-042016-12-09 BibTeX | EndNote: XML, Text | RIS

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Analysis of the Two-Part SET Switching Process in STO-based ReRAM
Materials Research Society Fall Meeting, BostonBoston, USA, 27 Nov 2016 - 2 Dec 20162016-11-272016-12-02 BibTeX | EndNote: XML, Text | RIS

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Switching Kinetics of Ta2O5-based ReRAM: Limiting Processes and Ultimate Switching Speed
5th International Conference Smart and Multifunctional Materials Structures & Systems, CIMTEC 2016, PerugiaPerugia, Italy, 5 Jun 2016 - 9 Jun 20162016-06-052016-06-09 317 pp. () BibTeX | EndNote: XML, Text | RIS

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ReRAM performance of metal/TiOx/Al2O3/metal nano crosspoint structures with oxides grownn byy atomic layer deposition
CIMTEC 2016, PerugiaPerugia, Italy, 5 Jun 2016 - 10 Jun 20162016-06-052016-06-10 BibTeX | EndNote: XML, Text | RIS

Letzte Änderung: 09.12.2022