Publikationen 2016
Journal Article
Realization of Minimum and Maximum Gate Function in Ta$_{2}$O$_{5}$-based Memristive Devices
Scientific reports 6, 23967 - (2016) [10.1038/srep23967]
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Contribution to a book
Physical Deposition Techniques
Memristive Phenomena - From Fundamental to Neuromorphic Computing
Jülich : Forschungszentrum Jülich (2016)
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Contribution to a conference proceedings
Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices
ESSDERC 2016 - 46th European Solid-State Device Research Conference, LausanneLausanne, Switzerland, 12 Sep 2016 - 15 Sep 2016
IEEE 160 pp. (2016) [10.1109/ESSDERC.2016.7599611]
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Journal Article
Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides
Physical review applied 6(6), 064015 (2016) [10.1103/PhysRevApplied.6.064015]
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Journal Article
Multidimensional Simulation of Threshold Switching in NbO$_{2}$ Based on an Electric Field Triggered Thermal Runaway Model
Advanced electronic materials 2(7), 1600169 - (2016) [10.1002/aelm.201600169]
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Contribution to a book
Tuning the Performance of Pt/HfO2/Ti/Pt ReRAM Devices Obtained from Plasma-Enhanced Atomic Layer Deposition for HfO2 Thin Films
Pennington, NJ, ECS transactions 75, 177 - 184 (2016) [10.1149/07506.0177ecst]
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Conference Presentation (Other)
Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series
2016 IEEE International Memory Workshop (IMW), ParisParis, France, 15 May 2016 - 18 May 2016
[10.1109/IMW.2016.7495280]
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Poster (Other)
Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series
International Memory Workshop, ParisParis, France, 15 May 2016 - 20 May 2016
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Contribution to a book
Chemical Vapour Deposition Techniques
Memristive Phenomena - From Fundamental to Neuromorphic Computing
Jülich : Forschungszentrum 339 pp. (2016)
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Journal Article
Impact of oxygen exchange reaction at the ohmic interface in Ta$_{2}$ O$_{5}$ -based ReRAM devices
Nanoscale 8(41), 17774 - 17781 (2016) [10.1039/C6NR03810G]
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Journal Article
Nonlinearity analysis of TaOX redox-based RRAM
Microelectronic engineering 154, 38 - 41 (2016) [10.1016/j.mee.2016.01.025]
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Conference Presentation (Other)
Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices
IEDM2016, BostonBoston, USA, 4 Dec 2016 - 9 Dec 2016
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Conference Presentation (Other)
Analysis of the Two-Part SET Switching Process in STO-based ReRAM
Materials Research Society Fall Meeting, BostonBoston, USA, 27 Nov 2016 - 2 Dec 2016
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Contribution to a conference proceedings
Switching Kinetics of Ta2O5-based ReRAM: Limiting Processes and Ultimate Switching Speed
5th International Conference Smart and Multifunctional Materials Structures & Systems, CIMTEC 2016, PerugiaPerugia, Italy, 5 Jun 2016 - 9 Jun 2016
317 pp. (2016)
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Conference Presentation (Other)
ReRAM performance of metal/TiOx/Al2O3/metal nano crosspoint structures with oxides grownn byy atomic layer deposition
CIMTEC 2016, PerugiaPerugia, Italy, 5 Jun 2016 - 10 Jun 2016
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