http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Breuer, T.FZJ* ; Nielen, L. ; Roesgen, B.FZJ* ; Waser, R.FZJ* ; Rana, V.FZJ* ; Linn, E. (Corresponding author)
Realization of Minimum and Maximum Gate Function in Ta$_{2}$O$_{5}$-based Memristive Devices
Scientific reports 6, 23967 - (2016) [10.1038/srep23967]2016   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book Dittmann, R. (Corresponding author)FZJ*
Physical Deposition Techniques
2016Memristive Phenomena - From Fundamental to Neuromorphic Computing Jülich : Forschungszentrum Jülich (2016)2016 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings Fleck, K. ; Bottger, U. ; Waser, R.FZJ* ; Aslam, N. ; Hoffmann-Eifert, S.FZJ* ; Menzel, S.FZJ*
Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices
2016ESSDERC 2016 - 46th European Solid-State Device Research Conference, LausanneLausanne, Switzerland, 12 Sep 2016 - 15 Sep 20162016-09-122016-09-15 IEEE 160 pp. (2016) [10.1109/ESSDERC.2016.7599611]2016   Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Fleck, K. (Corresponding author) ; La Torre, C. ; Aslam, N. ; Hoffmann-Eifert, S.FZJ* ; Böttger, U. ; Menzel, S.FZJ*
Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides
Physical review applied 6(6), 064015 (2016) [10.1103/PhysRevApplied.6.064015]2016   Files  Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Funck, C.FZJ* ; Menzel, S.FZJ* ; Aslam, N. ; Zhang, H.FZJ* ; Hardtdegen, A.FZJ* ; Waser, R.FZJ* ; Hoffmann-Eifert, S. (Corresponding author)FZJ*
Multidimensional Simulation of Threshold Switching in NbO$_{2}$ Based on an Electric Field Triggered Thermal Runaway Model
Advanced electronic materials 2(7), 1600169 - (2016) [10.1002/aelm.201600169]2016   Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book Hardtdegen, A.FZJ* ; Zhang, H.FZJ* ; Hoffmann-Eifert, S.FZJ*
Tuning the Performance of Pt/HfO2/Ti/Pt ReRAM Devices Obtained from Plasma-Enhanced Atomic Layer Deposition for HfO2 Thin Films
Pennington, NJ, ECS transactions 75, 177 - 184 (2016) [10.1149/07506.0177ecst]2016   Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other) Hardtdegen, A.FZJ* ; La Torre, C. ; Zhang, H.FZJ* ; Funck, C.FZJ* ; Menzel, S.FZJ* ; Waser, R. ; Hoffmann-Eifert, S.FZJ*
Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series
20162016 IEEE International Memory Workshop (IMW), ParisParis, France, 15 May 2016 - 18 May 20162016-05-152016-05-18 [10.1109/IMW.2016.7495280]   Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Poster (Other) Hardtdegen, A.FZJ* ; Hoffmann-Eifert, S.FZJ*
Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series
2016International Memory Workshop, ParisParis, France, 15 May 2016 - 20 May 20162016-05-152016-05-20 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a book Hoffmann-Eifert, S. (Corresponding author)FZJ*
Chemical Vapour Deposition Techniques
2016Memristive Phenomena - From Fundamental to Neuromorphic Computing Jülich : Forschungszentrum 339 pp. (2016)2016 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Kim, W. (Corresponding author)FZJ* ; Menzel, S.FZJ* ; Wouters, D. J. ; Guo, Y. ; Robertson, J. ; Roesgen, B. ; Waser, R.FZJ* ; Rana, V.FZJ*
Impact of oxygen exchange reaction at the ohmic interface in Ta$_{2}$ O$_{5}$ -based ReRAM devices
Nanoscale 8(41), 17774 - 17781 (2016) [10.1039/C6NR03810G]2016   Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article Kim, W. (Corresponding author)FZJ* ; Rösgen, B. ; Breuer, T.FZJ* ; Menzel, S.FZJ* ; Wouters, D. ; Waser, R.FZJ* ; Rana, V.FZJ*
Nonlinearity analysis of TaOX redox-based RRAM
Microelectronic engineering 154, 38 - 41 (2016) [10.1016/j.mee.2016.01.025]2016   Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other) Kim, W.FZJ* ; Hardtdegen, A.FZJ* ; Rodenbücher, C.FZJ* ; Menzel, S.FZJ* ; Wouters, D. J. ; Hoffmann-Eifert, S.FZJ* ; Buca, D. M.FZJ* ; Waser, R.FZJ* ; Rana, V.FZJ*
Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices
2016IEDM2016, BostonBoston, USA, 4 Dec 2016 - 9 Dec 20162016-12-042016-12-09 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other) La Torre, C. ; Fleck, K. ; Aslam, N. ; Hoffmann-Eifert, S.FZJ* ; Böttger, U. ; Waser, R.FZJ* ; Menzel, S.FZJ*
Analysis of the Two-Part SET Switching Process in STO-based ReRAM
2016Materials Research Society Fall Meeting, BostonBoston, USA, 27 Nov 2016 - 2 Dec 20162016-11-272016-12-02 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings Menzel, S.FZJ* ; Marchewka, A. ; Rösgen, B. ; Kim, W.FZJ* ; Havel, V. ; Fleck, K. ; Rana, V.FZJ* ; Böttger, U. ; Wouters, D. ; Waser, R.FZJ*
Switching Kinetics of Ta2O5-based ReRAM: Limiting Processes and Ultimate Switching Speed
20165th International Conference Smart and Multifunctional Materials Structures & Systems, CIMTEC 2016, PerugiaPerugia, Italy, 5 Jun 2016 - 9 Jun 20162016-06-052016-06-09 317 pp. (2016)2016 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other) Zhang, H.FZJ* ; Hoffmann-Eifert, S.FZJ* ; Waser, R.FZJ*
ReRAM performance of metal/TiOx/Al2O3/metal nano crosspoint structures with oxides grownn byy atomic layer deposition
2016CIMTEC 2016, PerugiaPerugia, Italy, 5 Jun 2016 - 10 Jun 20162016-06-052016-06-10 BibTeX | EndNote: XML, Text | RIS