2016

Funck, C. ; Menzel, S. ; Aslam, N. ; Zhang, H. ; Hardtdegen, A. ; Waser, R. ; Hoffmann-Eifert, S. (Corresponding author)
Multidimensional Simulation of Threshold Switching in NbO$_{2}$ Based on an Electric Field Triggered Thermal Runaway Model
Advanced electronic materials 2(7), 1600169 - (2016) [10.1002/aelm.201600169]2016 Files BibTeX | EndNote: XML, Text | RIS

Fleck, K. (Corresponding author) ; La Torre, C. ; Aslam, N. ; Hoffmann-Eifert, S. ; Böttger, U. ; Menzel, S.
Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides
Physical review applied 6(6), 064015 (2016) [10.1103/PhysRevApplied.6.064015]2016 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Kim, W. (Corresponding author) ; Rösgen, B. ; Breuer, T. ; Menzel, S. ; Wouters, D. ; Waser, R. ; Rana, V.
Nonlinearity analysis of TaOX redox-based RRAM
Microelectronic engineering 154, 38 - 41 (2016) [10.1016/j.mee.2016.01.025]2016 Files BibTeX | EndNote: XML, Text | RIS

Kim, W. (Corresponding author) ; Menzel, S. ; Wouters, D. J. ; Guo, Y. ; Robertson, J. ; Roesgen, B. ; Waser, R. ; Rana, V.
Impact of oxygen exchange reaction at the ohmic interface in Ta$_{2}$ O$_{5}$ -based ReRAM devices
Nanoscale 8(41), 17774 - 17781 (2016) [10.1039/C6NR03810G]2016 Files BibTeX | EndNote: XML, Text | RIS

Breuer, T. ; Nielen, L. ; Roesgen, B. ; Waser, R. ; Rana, V. ; Linn, E. (Corresponding author)
Realization of Minimum and Maximum Gate Function in Ta$_{2}$O$_{5}$-based Memristive Devices
Scientific reports 6, 23967 - (2016) [10.1038/srep23967]2016 Files Fulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

Last Modified: 18.03.2025