2016

Conference Presentation (Other) Kim, W.FZJ* ; Hardtdegen, A.FZJ* ; Rodenbücher, C.FZJ* ; Menzel, S.FZJ* ; Wouters, D. J. ; Hoffmann-Eifert, S.FZJ* ; Buca, D. M.FZJ* ; Waser, R.FZJ* ; Rana, V.FZJ*
Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices
2016IEDM2016, BostonBoston, USA, 4 Dec 2016 - 9 Dec 20162016-12-042016-12-09 BibTeX | EndNote: XML, Text | RIS

Poster (Other) Hardtdegen, A.FZJ* ; Hoffmann-Eifert, S.FZJ*
Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series
2016International Memory Workshop, ParisParis, France, 15 May 2016 - 20 May 20162016-05-152016-05-20 BibTeX | EndNote: XML, Text | RIS

Conference Presentation (Other) Hardtdegen, A.FZJ* ; La Torre, C. ; Zhang, H.FZJ* ; Funck, C.FZJ* ; Menzel, S.FZJ* ; Waser, R. ; Hoffmann-Eifert, S.FZJ*
Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series
20162016 IEEE International Memory Workshop (IMW), ParisParis, France, 15 May 2016 - 18 May 20162016-05-152016-05-18 [10.1109/IMW.2016.7495280] Files BibTeX | EndNote: XML, Text | RIS

Conference Presentation (Other) Zhang, H.FZJ* ; Hoffmann-Eifert, S.FZJ* ; Waser, R.FZJ*
ReRAM performance of metal/TiOx/Al2O3/metal nano crosspoint structures with oxides grownn byy atomic layer deposition
2016CIMTEC 2016, PerugiaPerugia, Italy, 5 Jun 2016 - 10 Jun 20162016-06-052016-06-10 BibTeX | EndNote: XML, Text | RIS

Conference Presentation (Other) La Torre, C. ; Fleck, K. ; Aslam, N. ; Hoffmann-Eifert, S.FZJ* ; Böttger, U. ; Waser, R.FZJ* ; Menzel, S.FZJ*
Analysis of the Two-Part SET Switching Process in STO-based ReRAM
2016Materials Research Society Fall Meeting, BostonBoston, USA, 27 Nov 2016 - 2 Dec 20162016-11-272016-12-02 BibTeX | EndNote: XML, Text | RIS

Last Modified: 18.03.2025