2018
Tailoring Thermoelectric Transport Properties of Ag-Alloyed PbTe: Effects of Microstructure Evolution
ACS applied materials & interfaces 10(45), 38994 - 39001 (2018) [10.1021/acsami.8b15204]
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High-Performance n-Type PbSe–Cu 2 Se Thermoelectrics through Conduction Band Engineering and Phonon Softening
Journal of the American Chemical Society 140(45), 15535 - 15545 (2018) [10.1021/jacs.8b10448]
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Atomic disordering processes in crystalline GeTe induced by ion irradiation
Journal of physics / D Applied physics D 51(49), 495103 - (2018) [10.1088/1361-6463/aae4ae]
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Controlled Crystal Growth of Indium Selenide, In 2 Se 3 , and the Crystal Structures of α-In 2 Se 3
Inorganic chemistry 57(18), 11775 - 11781 (2018) [10.1021/acs.inorgchem.8b01950]
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Thermoelectric Performance of IV-VI Compounds with Octahedral-Like Coordination: A Chemical-Bonding Perspective
Advanced materials 30(33), 1801787 - (2018) [10.1002/adma.201801787]
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Unique Bond Breaking in Crystalline Phase Change Materials and the Quest for Metavalent Bonding
Advanced materials 30(18), 1706735 - (2018) [10.1002/adma.201706735]
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Ag-Segregation to Dislocations in PbTe-Based Thermoelectric Materials
ACS applied materials & interfaces 10(4), 3609 - 3615 (2018) [10.1021/acsami.7b17142]
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2D or Not 2D: Strain Tuning in Weakly Coupled Heterostructures
Advanced functional materials 28(14), 1705901 - (2018) [10.1002/adfm.201705901]
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Incipient Metals: Functional Materials with a Unique Bonding Mechanism
Advanced materials 30(51), 1803777 - (2018) [10.1002/adma.201803777]
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Genesis and Effects of Swapping Bilayers in Hexagonal GeSb 2 Te 4
Chemistry of materials 30(14), 4770 - 4777 (2018) [10.1021/acs.chemmater.8b01900]
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Optoelectronic properties of high-Si-content-Ge 1 −x – y Si x Sn y /Ge 1− x Sn x /Ge 1− x–y Si x Sn y double heterostructure
Semiconductor science and technology 33(12), 124018 - (2018) [10.1088/1361-6641/aaebb5]
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GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers
ACS photonics 5(11), 4628 - 4636 (2018) [10.1021/acsphotonics.8b01116]
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Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO 2 /Ti/Pt Nanosized ReRAM Devices
ACS applied materials & interfaces 10(35), 29766 - 29778 (2018) [10.1021/acsami.8b09068]
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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO 2 /TiO x Bilayer ReRAM Cells
IEEE transactions on electron devices 65(8), 3229 - 3236 (2018) [10.1109/TED.2018.2849872]
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Multi-valued and Fuzzy Logic Realization using TaOx Memristive Devices
Scientific reports 8(1), 8 (2018) [10.1038/s41598-017-18329-3]
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