2019
Persistence of spin memory in a crystalline, insulating phase-change material
npj quantum materials 4(1), 57 (2019) [10.1038/s41535-019-0196-6]
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Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels
APL materials 7(9), 091110 - (2019) [10.1063/1.5108658]
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Switching between Crystallization from the Glassy and the Undercooled Liquid Phase in Phase Change Material Ge 2 Sb 2 Te 5
Advanced materials 31(39), 1900784 - (2019) [10.1002/adma.201900784]
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Stoichiometry Determination of Chalcogenide Superlattices by Means of X‐Ray Diffraction and its Limits
Physica status solidi / Rapid research letters Rapid research letters [...] 13(4), 1800577 - (2019) [10.1002/pssr.201800577]
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A Quantum‐Mechanical Map for Bonding and Properties in Solids
Advanced materials 31(3), 1806280 - (2019) [10.1002/adma.201806280]
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Phase Change Materials and Superlattices for Non‐Volatile Memories
Physica status solidi / Rapid research letters Rapid research letters [...] 13(4), 1900130 - (2019) [10.1002/pssr.201900130]
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Disorder Control in Crystalline GeSb 2 Te 4 and its Impact on Characteristic Length Scales
Physica status solidi / Rapid research letters Rapid research letters [...] 13(4), 1800578 - (2019) [10.1002/pssr.201800578]
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Role of grain boundaries in Ge–Sb–Te based chalcogenide superlattices
Journal of physics / Condensed matter Condensed matter 31(20), 204002 - (2019) [10.1088/1361-648X/ab078b]
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Direct atomic insight into the role of dopants in phase-change materials
Nature Communications 10(1), 3525 (2019) [10.1038/s41467-019-11506-0]
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Understanding the Structure and Properties of Sesqui‐Chalcogenides (i.e., V 2 VI 3 or Pn 2 Ch 3 (Pn = Pnictogen, Ch = Chalcogen) Compounds) from a Bonding Perspective
Advanced materials 31(43), 1904316 - (2019) [10.1002/adma.201904316]
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Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO x thin film with x ∼ 1
Nanoscale 11(36), 16978 - 16990 (2019) [10.1039/C9NR05285B]
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Selective area growth and stencil lithography for in situ fabricated quantum devices
Nature nanotechnology 14(9), 825 - 831 (2019) [10.1038/s41565-019-0506-y]
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Topotactic Phase Transition Driving Memristive Behavior
Advanced materials 31(40), 1903391 - (2019) [10.1002/adma.201903391]
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Stateful Three-Input Logic with Memristive Switches
Scientific reports 9(1), 14618 (2019) [10.1038/s41598-019-51039-6]
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Exploiting the switching dynamics of HfO2/TiOx-based ReRAM devices for reliable analogue memristive behaviour
APL materials 7, 091105 (2019) [10.1063/1.5108654]
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Exploiting topological matter for Majorana physics and devices
Solid state electronics 155, 99 - 104 (2019) [10.1016/j.sse.2019.03.005]
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Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters
Solid state electronics 155, 139-143 (2019) [10.1016/j.sse.2019.03.013]
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Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices
IEEE transactions on electron devices 66(3), 1268 - 1275 (2019) [10.1109/TED.2019.2892997]
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Impact of tensile strain on low Sn content GeSn lasing
Scientific reports 9(1), 259 (2019) [10.1038/s41598-018-36837-8]
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