2020
Discovering Electron‐Transfer‐Driven Changes in Chemical Bonding in Lead Chalcogenides (PbX, where X = Te, Se, S, O)
Advanced materials 32(49), 2005533 - (2020) [10.1002/adma.202005533]
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HRS Instability in Oxide-Based Bipolar Resistive Switching Cells
IEEE transactions on electron devices 67(10), 4208 - 4215 (2020) [10.1109/TED.2020.3018096]
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In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches
Advanced intelligent systems 2(10), 2070100 - (2020) [10.1002/aisy.202070100]
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Phase-Pure Wurtzite GaAs Nanowires Grown by Self-Catalyzed Selective Area Molecular Beam Epitaxy for Advanced Laser Devices and Quantum Disks
ACS applied nano materials 3(11), 11037 - 11047 (2020) [10.1021/acsanm.0c02241]
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Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement
Advanced materials 32(21), 1908302 - (2020) [10.1002/adma.201908302]
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Violation of the Stokes–Einstein relation in Ge2Sb2Te5, GeTe, Ag4In3Sb67Te26, and Ge15Sb85, and its connection to fast crystallization
Acta materialia 195, 491 - 500 (2020) [10.1016/j.actamat.2020.05.044]
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Exceptionally High Average Power Factor and Thermoelectric Figure of Merit in n-type PbSe by the Dual Incorporation of Cu and Te
Journal of the American Chemical Society 142(35), 15172 - 15186 (2020) [10.1021/jacs.0c07712]
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Hard-Gap Spectroscopy in a Self-Defined Mesoscopic InAs/Al Nanowire Josephson Junction
Physical review applied 14(5), 054019 (2020) [10.1103/PhysRevApplied.14.054019]
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Carrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy
Photonics research 8(6), 788 (2020) [10.1364/PRJ.385096]
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Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)
IEEE transactions on electron devices 67(8), 3115 - 3122 (2020) [10.1109/TED.2020.3001247]
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Picosecond multilevel resistive switching in tantalum oxide thin films
Scientific reports 10(1), 16391 (2020) [10.1038/s41598-020-73254-2]
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Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models
IEEE transactions on circuits and systems / 1 Regular papers 67(12), 4618 - 4630 (2020) [10.1109/TCSI.2020.3018502]
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Computational proximity lithography with extreme ultraviolet radiation
Optics express 28(18), 27000 - (2020) [10.1364/OE.398805]
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Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications
Nanoscale 12(24), 13103 - 13112 (2020) [10.1039/D0NR01847C]
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Comprehensive model for the electronic transport in Pt/SrTi O 3 analog memristive devices
Physical review / B 102(3), 035307 (2020) [10.1103/PhysRevB.102.035307]
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Cation diffusion in polycrystalline thin films of monoclinic HfO 2 deposited by atomic layer deposition
APL materials 8(8), 081104 - (2020) [10.1063/5.0013965]
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Structural Property Study for GeSn Thin Films
Materials 13(16), 3645 (2020) [10.3390/ma13163645]
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Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Nature photonics 14(6), 375 (2020) [10.1038/s41566-020-0601-5]
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In situ study of vacancy disordering in crystalline phase-change materials under electron beam irradiation
Acta materialia 187, 103 - 111 (2020) [10.1016/j.actamat.2020.01.043]
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Study of the SET switching event of VCM-based memories on a picosecond timescale
Journal of applied physics 127(20), 204501 - (2020) [10.1063/5.0003840]
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Design of defect-chemical properties and device performance in memristive systems
Science advances 6(19), eaaz9079 - (2020) [10.1126/sciadv.aaz9079]
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Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas
Nanotechnology 31(34), 345203 - (2020) [10.1088/1361-6528/ab91ef]
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Control of effective cooling rate upon magnetron sputter deposition ofglassy Ge 15 Te 85
Scripta materialia 178, 223 - 226 (2020) [10.1016/j.scriptamat.2019.11.024]
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Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires
Semiconductor science and technology 35(8), 13 (2020) [10.1088/1361-6641/ab8396]
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Thermally activated diffusion and lattice relaxation in (Si)GeSn materials
Physical review materials 4(3), 033604 (2020) [10.1103/PhysRevMaterials.4.033604]
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Chalcogenide Thermoelectrics Empowered by an Unconventional Bonding Mechanism
Advanced functional materials 30(8), 1904862 - (2020) [10.1002/adfm.201904862]
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Cu Intercalation and Br Doping to Thermoelectric SnSe 2 Lead to Ultrahigh Electron Mobility and Temperature‐Independent Power Factor
Advanced functional materials 30(6), 1908405 (2020) [10.1002/adfm.201908405]
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