2021
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
Advances in physics 70(2), 155-349 (2022) [10.1080/00018732.2022.2084006]
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Approaching the Glass Transition Temperature of GeTe by Crystallizing Ge 15 Te 85
Physica status solidi / Rapid research letters 15(3), 2000478 - (2021) [10.1002/pssr.202000478]
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Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier
Physical review / B 104(19), 195202 (2021) [10.1103/PhysRevB.104.195202]
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Standards for the Characterization of Endurance in Resistive Switching Devices
ACS nano 15(11), 17214 - 17231 (2021) [10.1021/acsnano.1c06980]
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A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices
ACS applied materials & interfaces 13(48), 58066 - 58075 (2021) [10.1021/acsami.1c14667]
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Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”
IEEE transactions on electron devices 68(11), 5925 - 5925 (2021) [10.1109/TED.2021.3109855]
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Intrinsic RESET Speed Limit of Valence Change Memories
ACS applied electronic materials 3(12), 5563 - 5572 (2021) [10.1021/acsaelm.1c00981]
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Phase‐Change and Ovonic Materials (Second Edition)
Physica status solidi / Rapid research letters 15(3), 2100078 - (2021) [10.1002/pssr.202100078]
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Disorder-induced Anderson-like localization for bidimensional thermoelectrics optimization
Matter 4(9), 2970 - 2984 (2021) [10.1016/j.matt.2021.07.017]
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Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation
Nanoscale advances 3(5), 1413 - 1421 (2021) [10.1039/D0NA00999G]
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Metavalent Bonding in Crystalline Solids: How Does It Collapse?
Advanced materials 33(39), 2102356 - (2021) [10.1002/adma.202102356]
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Tuning the Memory Window of TaOx ReRAM Using the RF Sputtering Power
2021 IEEE International Symposium on Circuits and Systems (ISCAS), DaeguDaegu, Korea, 22 May 2021 - 28 May 2021
Tuning the Memory Window of TaOx ReRAM using the RF Sputtering Power 978-1-7281, 978-1-7281-9201 (2021) [10.1109/ISCAS51556.2021.9401584]
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The potential of chemical bonding to design crystallization and vitrification kinetics
Nature Communications 12(1), 4978 (2021) [10.1038/s41467-021-25258-3]
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Boron Strengthened GeTe‐Based Alloys for Robust Thermoelectric Devices with High Output Power Density
Advanced energy materials 11(37), 2102012 - (2021) [10.1002/aenm.202102012]
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Review of Manufacturing Process Defects and Their Effects on Memristive Devices
Journal of electronic testing 47, 1 (2021) [10.1007/s10836-021-05968-8]
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Current-limiting amplifier for high speed measurement of resistive switching data
Review of scientific instruments 92(5), 054701 - (2021) [10.1063/5.0047571]
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How to Identify Lone Pairs, Van der Waals Gaps, and Metavalent Bonding Using Charge and Pair Density Methods: From Elemental Chalcogens to Lead Chalcogenides and Phase‐Change Materials
Physica status solidi / Rapid research letters 15(11), 2000534 - (2021) [10.1002/pssr.202000534]
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Exploring Area-Dependent Pr0.7Ca0.3MnO3-Based Memristive Devices as Synapses in Spiking and Artificial Neural Networks
Frontiers in neuroscience 15, 661261 (2021) [10.3389/fnins.2021.661261]
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Nb‐Mediated Grain Growth and Grain‐Boundary Engineering in Mg 3 Sb 2 ‐Based Thermoelectric Materials
Advanced functional materials 31(28), 2100258 - (2021) [10.1002/adfm.202100258]
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Theory and experimental verification of configurable computing with stochastic memristors
Scientific reports 11(1), 4218 (2021) [10.1038/s41598-021-83382-y]
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Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns
Frontiers in neuroscience 15, 661856 (2021) [10.3389/fnins.2021.661856]
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Tuning electrochemically driven surface transformation in atomically flat LaNiO3 thin films for enhanced water electrolysis
Nature materials 20, 674–682 (2021) [10.1038/s41563-020-00877-1]
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Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory
IEEE transactions on electron devices 68(3), 1024 - 1030 (2021) [10.1109/TED.2021.3049765]
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Materials Screening for Disorder‐Controlled Chalcogenide Crystals for Phase‐Change Memory Applications
Advanced materials 33(9), 2006221 - (2021) [10.1002/adma.202006221]
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Metavalent Bonding in Solids: Characteristic Representatives, Their Properties, and Design Options
Physica status solidi / Rapid research letters 15(3), 2000482 (2021) [10.1002/pssr.202000482]
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The importance of singly charged oxygen vacancies for electrical conduction in monoclinic HfO 2
Journal of applied physics 129(2), 025104 - (2021) [10.1063/5.0036024]
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Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
Advanced electronic materials 7(1), 2000815 (2021) [10.1002/aelm.202000815]
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