2022
Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance
Review of scientific instruments 93(2), 024705 (2022) [10.1063/5.0080532]
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Correlations between Cascaded Photons from Spatially Localized Biexcitons in ZnSe
Nano letters 22(23), 9457 (2022) [10.1021/acs.nanolett.2c03527]
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Enhancing the thermoelectric performance of β-Zn4Sb3 via progressive incorporation of Zn interstitials
Nano energy 104, 107967 - (2022) [10.1016/j.nanoen.2022.107967]
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High-performance and stable AgSbTe2-based thermoelectric materials for near room temperature applications
Journal of materiomics 8(6), 1095 - 1103 (2022) [10.1016/j.jmat.2022.07.005]
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Classification of properties and their relation to chemical bonding: Essential steps toward the inverse design of functional materials
Science advances 8(47), 0828 (2022) [10.1126/sciadv.ade0828]
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Study on sneak path effect in self-rectifying crossbar arrays based on emerging memristive devices
Frontiers in electronic materials 2, 988785 (2022) [10.3389/femat.2022.988785]
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Endurance of 2 Mbit Based BEOL Integrated ReRAM
IEEE access 10, 122696 - 122705 (2022) [10.1109/ACCESS.2022.3223657]
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Improved Solubility in Metavalently Bonded Solid Leads to Band Alignment, Ultralow Thermal Conductivity, and High Thermoelectric Performance in SnTe
Advanced functional materials 32(47), 2209980 - (2022) [10.1002/adfm.202209980]
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Learning and replaying spatiotemporal sequences: A replication study
Frontiers in integrative neuroscience 16, 113 (2022) [10.3389/fnint.2022.974177]
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Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition
Scientific reports 12(1), 18743 (2022) [10.1038/s41598-022-22889-4]
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Phase‐Change and Ovonic Materials (Third Edition)
Physica status solidi / Rapid research letters 16(9), 2200226 - (2022) [10.1002/pssr.202200226]
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Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe over a broad temperature interval
Nano energy 101, 107576 - (2022) [10.1016/j.nanoen.2022.107576]
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Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures
Solid state electronics 192, 108263 - (2022) [10.1016/j.sse.2022.108263]
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Effect of electron conduction on the read noise characteristics in ReRAM devices
APL materials 10(10), 101114 - (2022) [10.1063/5.0109787]
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A Deep Study of Resistance Switching Phenomena in TaO x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification
Advanced electronic materials 8(8), 2200182 - (2022) [10.1002/aelm.202200182]
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Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation
Advanced electronic materials 8(11), 2200549 - (2022) [10.1002/aelm.202200549]
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Microstructure engineering of yttrium-doped barium zirconate thin films via seed layer technique
Surface and coatings technology 434, 128161 - (2022) [10.1016/j.surfcoat.2022.128161]
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Memristively programmable transistors
Nanotechnology 33(4), 045203 - (2022) [10.1088/1361-6528/ac317f]
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Highly-oriented proton conducting BaZr0.9Y0.1O3−x ceramic thin films prepared by chemical solution deposition
Journal of the European Ceramic Society 42(7), 3245 - 3253 (2022) [10.1016/j.jeurceramsoc.2022.02.019]
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Resistance Drift Convergence and Inversion in Amorphous Phase Change Materials
Advanced functional materials 32(48), 2207194 - (2022) [10.1002/adfm.202207194]
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Efficient Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars with Growth Controlled Emission Energy
ACS nano 16(9), 14582 - 14589 (2022) [10.1021/acsnano.2c05045]
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Moisture Effect on the Threshold Switching of TOPO-Stabilized Sub-10 nm HfO 2 Nanocrystals in Nanoscale Devices
The journal of physical chemistry <Washington, DC> / C 126(43), 18571 - 18579 (2022) [10.1021/acs.jpcc.2c06303]
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Oxygen nonstoichiometry and electrical transport properties of Pr1-Ca MnO3 ceramics
Journal of the European Ceramic Society 42(15), 7049 - 7062 (2022) [10.1016/j.jeurceramsoc.2022.08.006]
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Sequence learning, prediction, and replay in networks of spiking neurons
PLoS Computational Biology 18, e1010233 (2022) [10.1371/journal.pcbi.1010233]
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Reliability aspects of binary vector-matrix-multiplications using ReRAM devices
Neuromorphic computing and engineering 2(3), 034001 - (2022) [10.1088/2634-4386/ac6d04]
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The glass transition of water, insight from phase change materials
Journal of non-crystalline solids: X 14, 100084 - (2022) [10.1016/j.nocx.2022.100084]
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Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe
Small 18(21), 2201753 - (2022) [10.1002/smll.202201753]
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Fragile-to-Strong Transition in Phase-Change Material Ge3Sb6Te5
Advanced functional materials 32(31), 2202714 - (2022) [10.1002/adfm.202202714]
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Integration of Topological Insulator Josephson Junctions in Superconducting Qubit Circuits
Nano letters 22(7), 2595 - 2602 (2022) [10.1021/acs.nanolett.1c04055]
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Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices
IEEE transactions on circuits and systems / 2 69(5), 2473 - 2477 (2022) [10.1109/TCSII.2022.3160304]
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Application of the Quantum-Point-Contact Formalism to Model the Filamentary Conduction in Ta 2 O 5 -Based Resistive Switching Devices
Physical review applied 17(3), 034062 (2022) [10.1103/PhysRevApplied.17.034062]
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Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
Physical review materials 6(2), 024602 (2022) [10.1103/PhysRevMaterials.6.024602]
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Separating the Effects of Band Bending and Covalency in Hybrid Perovskite Oxide Electrocatalyst Bilayers for Water Electrolysis
ACS applied materials & interfaces 14(12), 14129–14136 (2022) [10.1021/acsami.1c20337]
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Simulating the Cortical Microcircuit Significantly Faster Than Real Time on the IBM INC-3000 Neural Supercomputer
Frontiers in neuroscience 15, 728460 (2022) [10.3389/fnins.2021.728460]
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Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism
Advanced electronic materials 8(8), 2100936 - (2022) [10.1002/aelm.202100936]
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Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors
Advanced functional materials 32(15), 2111242 - (2022) [10.1002/adfm.202111242]
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Halide Perovskites: Advanced Photovoltaic Materials Empowered by a Unique Bonding Mechanism
Advanced functional materials 16(2), 2110166 - (2022) [10.1002/adfm.202110166]
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Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications
Advanced electronic materials 8(8), 2100974 - (2022) [10.1002/aelm.202100974]
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Thermally Controlled Charge‐Carrier Transitions in Disordered PbSbTe Chalcogenides
Advanced materials 34(3), 2106868 (2022) [10.1002/adma.202106868]
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Nanoionic memristive phenomena in metal oxides: the valence change mechanism
Advances in physics 70(2), 155-349 (2022) [10.1080/00018732.2022.2084006]
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