2023
Two-step phase manipulation by tailoring chemical bonds results in high-performance GeSe thermoelectrics
The Innovation 4(6), 100522 - (2023) [10.1016/j.xinn.2023.100522]
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Phase‐Change and Ovonic Materials (Fourth Edition)
Physica status solidi / Rapid research letters 17(8), 2300129 (2023) [10.1002/pssr.202300129]
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Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2
Surfaces 6(4), 351 - 363 (2023) [10.3390/surfaces6040025]
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Revisiting the Nature of Chemical Bonding in Chalcogenides to Explain and Design their Properties
Advanced materials 35(20), 2208485 (2023) [10.1002/adma.202208485]
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Fast crystallization below the glass transition temperature in hyperquenched systems
The journal of chemical physics 158(5), 054502 (2023) [10.1063/5.0136306]
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Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding
Advanced materials 35(19), 2300893 (2023) [10.1002/adma.202300893]
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Dynamic Phase Transition Leading to Extraordinary Plastic Deformability of Thermoelectric SnSe 2 Single Crystal
Advanced energy materials 13(27), 2300965 (2023) [10.1002/aenm.202300965]
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Evolution of Short‐Range Order of Amorphous GeTe Upon Structural Relaxation Obtained by TEM Diffractometry and RMC Methods
Advanced science 10(36), 2304323 (2023) [10.1002/advs.202304323]
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Roadmap for phase change materials in photonics and beyond
iScience 26(10), 107946 - (2023) [10.1016/j.isci.2023.107946]
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Migration-Enhanced Metal–Organic Chemical Vapor Deposition of Wafer-Scale Fully Coalesced WS 2 and WSe 2 Monolayers
Crystal growth & design 23(3), 1547 - 1558 (2023) [10.1021/acs.cgd.2c01134]
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Semiconductor Membranes for Electrostatic Exciton Trapping in Optically Addressable Quantum Transport Devices
Physical review applied 19(4), 044095 (2023) [10.1103/PhysRevApplied.19.044095]
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Sequence learning in a spiking neuronal network with memristive synapses
Neuromorphic computing and engineering 3, 034014 (2023) [10.1088/2634-4386/acf1c4]
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Ternary Łukasiewicz logic using memristive devices
Neuromorphic computing and engineering 3(4), 044001 - (2023) [10.1088/2634-4386/acfbf3]
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A Universal Strategy of Perovskite Ink ‐ Substrate Interaction to Overcome the Poor Wettability of a Self‐Assembled Monolayer for Reproducible Perovskite Solar Cells
Advanced functional materials 33(47), 2305812 (2023) [10.1002/adfm.202305812]
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Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al 2 O 3 /TiO x ‐Based Memristive Devices
Advanced electronic materials 9(12), 2300520 (2023) [10.1002/aelm.202300520]
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Phase-Selective Epitaxy of Trigonal and Orthorhombic Bismuth Thin Films on Si (111)
Nanomaterials 13(14), 2143 - (2023) [10.3390/nano13142143]
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Metavalent Bonding in Layered Phase‐Change Memory Materials
Advanced science 10(15), 2300901 (2023) [10.1002/advs.202300901]
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Gibbs Adsorption and Zener Pinning Enable MechanicallyRobust High-Performance Bi2Te3-Based ThermoelectricDevices
Advanced science 12(26), 2302688 (2023) [10.1002/advs.202302688]
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The MoS 2 -Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS 2 Band Structure
The journal of physical chemistry / C 127(22), 10878–10887 (2023) [10.1021/acs.jpcc.3c02503]
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Coherent noise enables probabilistic sequence replay in spiking neuronal networks
PLoS Computational Biology 19(5), 5 (2023) [10.1371/journal.pcbi.1010989]
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Bit slicing approaches for variability aware ReRAM CIM macros
Information technology 0(0), 1 (2023) [10.1515/itit-2023-0018]
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System model of neuromorphic sequence learning on a memristive crossbar array
Neuromorphic computing and engineering 3, 024002 (2023) [10.1088/2634-4386/acca45]
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Metavalent bonding impacts charge carrier transport across grain boundaries
Nano research energy 2, e9120057 - (2023) [10.26599/NRE.2023.9120057]
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Strong charge carrier scattering at grain boundaries of PbTe caused by the collapse of metavalent bonding5233
Nature Communications 14(1), 719 (2023) [10.1038/s41467-023-36415-1]
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In situ Design of High-Performance Dual Phase GeSe Thermoelectrics by Tailoring Chemical Bonds
Advanced functional materials 33(17), 2214854 -2214866 (2023) [10.1002/adfm.202214854]
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SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials
Micromachines 14(3), 571 - (2023) [10.3390/mi14030571]
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Selective Area Epitaxy of Quasi-1-Dimensional Topological Nanostructures and Networks
Nanomaterials 13(2), 354 - (2023) [10.3390/nano13020354]
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Tailor-made synaptic dynamics based on memristive devices
Frontiers in electronic materials 3, 1061269 (2023) [10.3389/femat.2023.1061269]
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A Study of the Electroforming Process in 1T1R Memory Arrays
IEEE transactions on computer-aided design of integrated circuits and systems 42(2), 558 - 568 (2023) [10.1109/TCAD.2022.3175947]
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Grain Boundary Complexions Enable a Simultaneous Optimization of Electron and Phonon Transport Leading to High-Performance GeTe Thermoelectric Devices
Advanced energy materials 13(3), 2203361 - (2023) [10.1002/aenm.202203361]
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