2025
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Bilayer Ohmic Electrode Engineering in TaOX ReRAM Devices
IEEE electron device letters 1, 1 - 1 (2025) [10.1109/LED.2025.3585469]
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Pr 1– x Ca x MnO 3 -Based Memristive Heterostructures: Basic Mechanisms and Applications
Chemical reviews 1, acs.chemrev.4c00813 (2025) [10.1021/acs.chemrev.4c00813]
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Automated Endurance Characterization of Phase Change Memory
IEEE access 13, 71214 - 71222 (2025) [10.1109/ACCESS.2025.3562434]
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Correlative Characterizations Reveal the Structure‐Bonding‐Property Relationship at a Local Scale
Chemistry methods 10, e202500009 (2025) [10.1002/cmtd.202500009]
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Dynamic Analysis of the Effect of the Device-to-Device Variability of Real-World Memristors on the Implementation of Uncoupled Memristive Cellular Nonlinear Networks
IEEE transactions on nanotechnology 24, 121-128 (2025) [10.1109/TNANO.2025.3545251]
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Tailoring the Electron and Phonon Transport in Metavalently Bonded GeTe by Stepwise Doping
Advanced energy materials 15(20), 2405178 (2025) [10.1002/aenm.202405178]
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Engineering Epitaxial Interfaces for Topological Insulator — Superconductor Hybrid Devices with Al Electrodes
Advanced quantum technologies 8(3), 2400343 (2025) [10.1002/qute.202400343]
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Improved Charge Carrier Transport Across Grain Boundaries in N‐type PbSe by Dopant Segregation
Small science 5(3), 2300299 (2025) [10.1002/smsc.202300299]
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