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In situ Al2O3 atomic layer deposition on pristine (0 0 1) GaAs: interface chemistry and its implication on charge carrier recombination and Fermi level pinning
Applied surface science 720, 165114 - (2026) [10.1016/j.apsusc.2025.165114]
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Atomistic Understanding of 2D Monatomic Phase‐Change Material for Non‐Volatile Optical Applications
Advanced science 13(16), e13157 (2026) [10.1002/advs.202513157]
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Superconducting diode effect in selectively grown topological insulator based Josephson junctions
Physical review / B 113(3), 035440 (2026) [10.1103/gc7k-rn8q]
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Analysis and Design of Multitasking Memristor Cellular Nonlinear Networks
IEEE transactions on circuits and systems / 1 1, 1 - 14 (2025) [10.1109/TCSI.2025.3623568]
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Controlling the Crystallization Kinetics of Low Loss Phase Change Material Sb 2 S 3
Advanced physics research 4(9), 2500005 (2025) [10.1002/apxr.202500005]
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Toward Direct Laser Writing of Dual‐Layer Metasurfaces with the Plasmonic Phase‐Change Material In 3 SbTe 2
Advanced optical materials 13(17), 2500215 (2025) [10.1002/adom.202500215]
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Infrared beam-shaping on demand via tailored geometric phase metasurfaces employing the plasmonic phase-change material In3SbTe2
Nature Communications 16(1), 3698 (2025) [10.1038/s41467-025-59122-5]
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Coherent Phonons in Epitaxial Thin Films of Phase‐Change Material GeTe
Physica status solidi / Rapid research letters 19(7), 2500125 (2025) [10.1002/pssr.202500125]
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From phase-change materials to thermoelectrics: The role of metavalent bonding
Journal of materials research 40(12), 1747 - 1756 (2025) [10.1557/s43578-025-01619-2]
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Phase‐Change and Ovonic Materials (Sixth Edition)
Physica status solidi / Rapid research letters 19(7), 2500218 (2025) [10.1002/pssr.202500218]
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The Influence of Reactive Ion Etching Chemistry on InitialResistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices
Materials 18(20), 4681 - (2025) [10.3390/ma18204681]
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Frustrated Frustration of Arrays with Four-Terminal Nb-Pt-Nb Josephson Junctions
Physical review letters 135(15), 156002 (2025) [10.1103/gxdc-py56]
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Exploiting read noise of filamentary VCM ReRAM for robust TRNG
IEEE transactions on electron devices 72(11), 5988 - 5994 (2025) [10.1109/TED.2025.3611916]
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Induced superconductivity in hybrid Au/YBa2Cu3O7−x electrodes on vicinal substrates
Scientific reports 15(1), 32282 (2025) [10.1038/s41598-025-17434-y]
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Oxygen Vacancy Dynamics in Different Switching Modes of Hf 0.5 Zr 0.5 O 2−δ
ACS nano 19(32), 29405–29415 (2025) [10.1021/acsnano.5c07038]
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Bilayer Ohmic Electrode Engineering in TaOX ReRAM Devices
IEEE electron device letters 46(9), 1537-1540 (2025) [10.1109/LED.2025.3585469]
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Automated Endurance Characterization of Phase Change Memory
IEEE access 13, 71214 - 71222 (2025) [10.1109/ACCESS.2025.3562434]
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Correlative Characterizations Reveal the Structure‐Bonding‐Property Relationship at a Local Scale
Chemistry methods 5(9), e202500009 (2025) [10.1002/cmtd.202500009]
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Dynamic Analysis of the Effect of the Device-to-Device Variability of Real-World Memristors on the Implementation of Uncoupled Memristive Cellular Nonlinear Networks
IEEE transactions on nanotechnology 24, 121-128 (2025) [10.1109/TNANO.2025.3545251]
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Tailoring the Electron and Phonon Transport in Metavalently Bonded GeTe by Stepwise Doping
Advanced energy materials 15(20), 2405178 (2025) [10.1002/aenm.202405178]
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Engineering Epitaxial Interfaces for Topological Insulator — Superconductor Hybrid Devices with Al Electrodes
Advanced quantum technologies 8(3), 2400343 (2025) [10.1002/qute.202400343]
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Pr1-xCaxMnO3-based memristive heterostructures: Basic mechanisms and applications
Chemical reviews 125(13), 6156–6202 (2025) [10.1021/acs.chemrev.4c00813]
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Improved Charge Carrier Transport Across Grain Boundaries in N‐type PbSe by Dopant Segregation
Small science 5(3), 2300299 (2025) [10.1002/smsc.202300299]
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Robust Material Properties in Epitaxial In 2 Te 3 Thin Films across Varying Thicknesses
Small 21(51), e08738 (2025) [10.1002/smll.202508738]
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Controlling the magnetotransport properties of magnetic topological insulator Cr x ( Bi y Sb 1 − y ) 2 − x Te 3 thin films via molecular beam epitaxy
Physical review materials 9(12), 124202 (2025) [10.1103/8m2h-83zm]
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Trembling motion of electrons driven by Larmor spin precession
npj spintronics 3(1), 52 (2025) [10.1038/s44306-025-00117-9]
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Nanoswitches: Resistively Switching Chalcogenides for Future Electronics
Physica status solidi / A 221(22), 2400810 (2024) [10.1002/pssa.202400810]
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Effect of Transistor Transfer Characteristics on the Programming Process in 1T1R Configuration
IEEE transactions on electron devices 71(4), 2423 - 2430 (2024) [10.1109/TED.2024.3370536]
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Thermal stability and coalescence dynamics of exsolved metal nanoparticles at charged perovskite surfaces
Nature Communications 15(1), 9724 (2024) [10.1038/s41467-024-54008-4]
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It's Getting Hot in Here: Hardware Security Implications of Thermal Crosstalk on ReRAMs
IEEE transactions on reliability 74(4), 4499 - 4513 (2024) [10.1109/TR.2024.3371589]
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A flexible and fast digital twin for RRAM systems applied for training resilient neural networks
Scientific reports 14(1), 23695 (2024) [10.1038/s41598-024-73439-z]
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Decoupling Nucleation and Growth in Fast Crystallization of Phase Change Materials
Advanced functional materials 34(39), 2403476 (2024) [10.1002/adfm.202403476]
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Doping strategy in metavalently bonded materials for advancing thermoelectric performance
Nature Communications 15(1), 8286 (2024) [10.1038/s41467-024-52645-3]
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Shadow Wall Epitaxy of Compound Semiconductors toward All in Situ Fabrication of Quantum Devices
ACS applied electronic materials 6, 6246 (2024) [10.1021/acsaelm.4c01104]
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Two-Dimensional Photonic Crystal Cavities in ZnSe Quantum Well Structures
ACS photonics 11(9), 3545 (2024) [10.1021/acsphotonics.4c00340]
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Full Picture of Lattice Deformation in a Ge 1-x Sn x Micro‐Disk by 5D X‐ray Diffraction Microscopy
Small Methods 8(12), 2400598 (2024) [10.1002/smtd.202400598]
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Cavity-Enhanced Single-Photon Emission from a Single Impurity-Bound Exciton in ZnSe
ACS photonics 11(3), 1103 - 1108 (2024) [10.1021/acsphotonics.3c01540]
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Theoretico-experimental analysis of bistability in the oscillatory response of a TaOx ReRAM to pulse train stimuli
Frontiers in nanotechnology 6, 1301320 (2024) [10.3389/fnano.2024.1301320]
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Growth of Textured Chalcogenide Thin Films and Their Functionalization through Confinement
Physica status solidi / A 221(22), 2300921 (2024) [10.1002/pssa.202300921]
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Metavalently bonded tellurides: the essence of improved thermoelectric performance in elemental Te
Nature Communications 15(1), 3177 (2024) [10.1038/s41467-024-47578-w]
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Ostwald Ripening of Ag 2 Te Precipitates in Thermoelectric PbTe: Effects of Crystallography, Dislocations, and Interatomic Bonding
Advanced energy materials 14(19), 2304442 (2024) [10.1002/aenm.202304442]
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Metavalent Bonding in Cubic SnSe Alloys Improves Thermoelectric Properties over a Broad Temperature Range
Advanced functional materials 34(30), 2315652 (2024) [10.1002/adfm.202315652]
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Growth and Electrical Characterization of Hybrid Core/Shell InAs/CdSe Nanowires
ACS applied materials & interfaces 16(8), 11035 - 11042 (2024) [10.1021/acsami.3c18267]
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Heterogeneous Integration of Graphene and HfO 2 Memristors
Advanced functional materials 34(19), 2309558 (2024) [10.1002/adfm.202309558]
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In-Plane Anisotropy of Electrical Transport in Y0.85Tb0.15Ba2Cu3O7−x Films
Materials 17(3), 558 - (2024) [10.3390/ma17030558]
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Atom Probe Tomography Advances ChalcogenidePhase-Change and Thermoelectric Materials
Physica status solidi / A 221(22), 2300425 (2024) [10.1002/pssa.202300425]
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Confinement‐Induced Phonon Softening and Hardening in Sb 2 Te 3 Thin Films
Advanced functional materials 34(1), 2307681 (2024) [10.1002/adfm.202307681]
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Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi 2 S 3
Advanced functional materials 34(11), 2306961 (2024) [10.1002/adfm.202306961]
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Tailoring chemical bonds to design unconventional glasses
Proceedings of the National Academy of Sciences of the United States of America 121(2), e2316498121 (2024) [10.1073/pnas.2316498121]
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Metavalent or Hypervalent Bonding: Is There a Chance for Reconciliation?
Advanced science 11(6), 2308578 (2024) [10.1002/advs.202308578]
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In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys
Fundamental research 4(5), 1235-1242 (2024) [10.1016/j.fmre.2022.09.010]
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Two-step phase manipulation by tailoring chemical bonds results in high-performance GeSe thermoelectrics
The Innovation 4(6), 100522 - (2023) [10.1016/j.xinn.2023.100522]
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Phase‐Change and Ovonic Materials (Fourth Edition)
Physica status solidi / Rapid research letters 17(8), 2300129 (2023) [10.1002/pssr.202300129]
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Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2
Surfaces 6(4), 351 - 363 (2023) [10.3390/surfaces6040025]
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Revisiting the Nature of Chemical Bonding in Chalcogenides to Explain and Design their Properties
Advanced materials 35(20), 2208485 (2023) [10.1002/adma.202208485]
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Fast crystallization below the glass transition temperature in hyperquenched systems
The journal of chemical physics 158(5), 054502 (2023) [10.1063/5.0136306]
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Doping by Design: Enhanced Thermoelectric Performance of GeSe Alloys Through Metavalent Bonding
Advanced materials 35(19), 2300893 (2023) [10.1002/adma.202300893]
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Dynamic Phase Transition Leading to Extraordinary Plastic Deformability of Thermoelectric SnSe 2 Single Crystal
Advanced energy materials 13(27), 2300965 (2023) [10.1002/aenm.202300965]
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Evolution of Short‐Range Order of Amorphous GeTe Upon Structural Relaxation Obtained by TEM Diffractometry and RMC Methods
Advanced science 10(36), 2304323 (2023) [10.1002/advs.202304323]
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Roadmap for phase change materials in photonics and beyond
iScience 26(10), 107946 - (2023) [10.1016/j.isci.2023.107946]
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Migration-Enhanced Metal–Organic Chemical Vapor Deposition of Wafer-Scale Fully Coalesced WS 2 and WSe 2 Monolayers
Crystal growth & design 23(3), 1547 - 1558 (2023) [10.1021/acs.cgd.2c01134]
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Semiconductor Membranes for Electrostatic Exciton Trapping in Optically Addressable Quantum Transport Devices
Physical review applied 19(4), 044095 (2023) [10.1103/PhysRevApplied.19.044095]
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Sequence learning in a spiking neuronal network with memristive synapses
Neuromorphic computing and engineering 3, 034014 (2023) [10.1088/2634-4386/acf1c4]
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Ternary Łukasiewicz logic using memristive devices
Neuromorphic computing and engineering 3(4), 044001 - (2023) [10.1088/2634-4386/acfbf3]
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A Universal Strategy of Perovskite Ink ‐ Substrate Interaction to Overcome the Poor Wettability of a Self‐Assembled Monolayer for Reproducible Perovskite Solar Cells
Advanced functional materials 33(47), 2305812 (2023) [10.1002/adfm.202305812]
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Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al 2 O 3 /TiO x ‐Based Memristive Devices
Advanced electronic materials 9(12), 2300520 (2023) [10.1002/aelm.202300520]
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Phase-Selective Epitaxy of Trigonal and Orthorhombic Bismuth Thin Films on Si (111)
Nanomaterials 13(14), 2143 - (2023) [10.3390/nano13142143]
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Metavalent Bonding in Layered Phase‐Change Memory Materials
Advanced science 10(15), 2300901 (2023) [10.1002/advs.202300901]
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Gibbs Adsorption and Zener Pinning Enable MechanicallyRobust High-Performance Bi2Te3-Based ThermoelectricDevices
Advanced science 12(26), 2302688 (2023) [10.1002/advs.202302688]
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The MoS 2 -Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS 2 Band Structure
The journal of physical chemistry / C 127(22), 10878–10887 (2023) [10.1021/acs.jpcc.3c02503]
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Coherent noise enables probabilistic sequence replay in spiking neuronal networks
PLoS Computational Biology 19(5), 5 (2023) [10.1371/journal.pcbi.1010989]
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Bit slicing approaches for variability aware ReRAM CIM macros
Information technology 0(0), 1 (2023) [10.1515/itit-2023-0018]
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System model of neuromorphic sequence learning on a memristive crossbar array
Neuromorphic computing and engineering 3, 024002 (2023) [10.1088/2634-4386/acca45]
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Metavalent bonding impacts charge carrier transport across grain boundaries
Nano research energy 2, e9120057 - (2023) [10.26599/NRE.2023.9120057]
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Strong charge carrier scattering at grain boundaries of PbTe caused by the collapse of metavalent bonding5233
Nature Communications 14(1), 719 (2023) [10.1038/s41467-023-36415-1]
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In situ Design of High-Performance Dual Phase GeSe Thermoelectrics by Tailoring Chemical Bonds
Advanced functional materials 33(17), 2214854 -2214866 (2023) [10.1002/adfm.202214854]
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SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials
Micromachines 14(3), 571 - (2023) [10.3390/mi14030571]
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Selective Area Epitaxy of Quasi-1-Dimensional Topological Nanostructures and Networks
Nanomaterials 13(2), 354 - (2023) [10.3390/nano13020354]
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Tailor-made synaptic dynamics based on memristive devices
Frontiers in electronic materials 3, 1061269 (2023) [10.3389/femat.2023.1061269]
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A Study of the Electroforming Process in 1T1R Memory Arrays
IEEE transactions on computer-aided design of integrated circuits and systems 42(2), 558 - 568 (2023) [10.1109/TCAD.2022.3175947]
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Grain Boundary Complexions Enable a Simultaneous Optimization of Electron and Phonon Transport Leading to High-Performance GeTe Thermoelectric Devices
Advanced energy materials 13(3), 2203361 - (2023) [10.1002/aenm.202203361]
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Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance
Review of scientific instruments 93(2), 024705 (2022) [10.1063/5.0080532]
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Correlations between Cascaded Photons from Spatially Localized Biexcitons in ZnSe
Nano letters 22(23), 9457 (2022) [10.1021/acs.nanolett.2c03527]
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Enhancing the thermoelectric performance of β-Zn4Sb3 via progressive incorporation of Zn interstitials
Nano energy 104, 107967 - (2022) [10.1016/j.nanoen.2022.107967]
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High-performance and stable AgSbTe2-based thermoelectric materials for near room temperature applications
Journal of materiomics 8(6), 1095 - 1103 (2022) [10.1016/j.jmat.2022.07.005]
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Classification of properties and their relation to chemical bonding: Essential steps toward the inverse design of functional materials
Science advances 8(47), 0828 (2022) [10.1126/sciadv.ade0828]
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Study on sneak path effect in self-rectifying crossbar arrays based on emerging memristive devices
Frontiers in electronic materials 2, 988785 (2022) [10.3389/femat.2022.988785]
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Endurance of 2 Mbit Based BEOL Integrated ReRAM
IEEE access 10, 122696 - 122705 (2022) [10.1109/ACCESS.2022.3223657]
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Improved Solubility in Metavalently Bonded Solid Leads to Band Alignment, Ultralow Thermal Conductivity, and High Thermoelectric Performance in SnTe
Advanced functional materials 32(47), 2209980 - (2022) [10.1002/adfm.202209980]
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Learning and replaying spatiotemporal sequences: A replication study
Frontiers in integrative neuroscience 16, 113 (2022) [10.3389/fnint.2022.974177]
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Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition
Scientific reports 12(1), 18743 (2022) [10.1038/s41598-022-22889-4]
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Phase‐Change and Ovonic Materials (Third Edition)
Physica status solidi / Rapid research letters 16(9), 2200226 - (2022) [10.1002/pssr.202200226]
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Dynamic doping and Cottrell atmosphere optimize the thermoelectric performance of n-type PbTe over a broad temperature interval
Nano energy 101, 107576 - (2022) [10.1016/j.nanoen.2022.107576]
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Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures
Solid state electronics 192, 108263 - (2022) [10.1016/j.sse.2022.108263]
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Effect of electron conduction on the read noise characteristics in ReRAM devices
APL materials 10(10), 101114 - (2022) [10.1063/5.0109787]
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A Deep Study of Resistance Switching Phenomena in TaO x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification
Advanced electronic materials 8(8), 2200182 - (2022) [10.1002/aelm.202200182]
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Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation
Advanced electronic materials 8(11), 2200549 - (2022) [10.1002/aelm.202200549]
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Microstructure engineering of yttrium-doped barium zirconate thin films via seed layer technique
Surface and coatings technology 434, 128161 - (2022) [10.1016/j.surfcoat.2022.128161]
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Memristively programmable transistors
Nanotechnology 33(4), 045203 - (2022) [10.1088/1361-6528/ac317f]
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Highly-oriented proton conducting BaZr0.9Y0.1O3−x ceramic thin films prepared by chemical solution deposition
Journal of the European Ceramic Society 42(7), 3245 - 3253 (2022) [10.1016/j.jeurceramsoc.2022.02.019]
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Resistance Drift Convergence and Inversion in Amorphous Phase Change Materials
Advanced functional materials 32(48), 2207194 - (2022) [10.1002/adfm.202207194]
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Efficient Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars with Growth Controlled Emission Energy
ACS nano 16(9), 14582 - 14589 (2022) [10.1021/acsnano.2c05045]
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Moisture Effect on the Threshold Switching of TOPO-Stabilized Sub-10 nm HfO 2 Nanocrystals in Nanoscale Devices
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Oxygen nonstoichiometry and electrical transport properties of Pr1-Ca MnO3 ceramics
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Nanoionic memristive phenomena in metal oxides: the valence change mechanism
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Reliability aspects of binary vector-matrix-multiplications using ReRAM devices
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The glass transition of water, insight from phase change materials
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Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTe
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Fragile-to-Strong Transition in Phase-Change Material Ge3Sb6Te5
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Integration of Topological Insulator Josephson Junctions in Superconducting Qubit Circuits
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Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices
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Application of the Quantum-Point-Contact Formalism to Model the Filamentary Conduction in Ta 2 O 5 -Based Resistive Switching Devices
Physical review applied 17(3), 034062 (2022) [10.1103/PhysRevApplied.17.034062]
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Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
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Separating the Effects of Band Bending and Covalency in Hybrid Perovskite Oxide Electrocatalyst Bilayers for Water Electrolysis
ACS applied materials & interfaces 14(12), 14129–14136 (2022) [10.1021/acsami.1c20337]
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Simulating the Cortical Microcircuit Significantly Faster Than Real Time on the IBM INC-3000 Neural Supercomputer
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Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism
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Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors
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Halide Perovskites: Advanced Photovoltaic Materials Empowered by a Unique Bonding Mechanism
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Tailoring Crystallization Kinetics of Chalcogenides for Photonic Applications
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Thermally Controlled Charge‐Carrier Transitions in Disordered PbSbTe Chalcogenides
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Approaching the Glass Transition Temperature of GeTe by Crystallizing Ge 15 Te 85
Physica status solidi / Rapid research letters 15(3), 2000478 - (2021) [10.1002/pssr.202000478]
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Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier
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Standards for the Characterization of Endurance in Resistive Switching Devices
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A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices
ACS applied materials & interfaces 13(48), 58066 - 58075 (2021) [10.1021/acsami.1c14667]
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Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”
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Intrinsic RESET Speed Limit of Valence Change Memories
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Phase‐Change and Ovonic Materials (Second Edition)
Physica status solidi / Rapid research letters 15(3), 2100078 - (2021) [10.1002/pssr.202100078]
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Disorder-induced Anderson-like localization for bidimensional thermoelectrics optimization
Matter 4(9), 2970 - 2984 (2021) [10.1016/j.matt.2021.07.017]
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Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation
Nanoscale advances 3(5), 1413 - 1421 (2021) [10.1039/D0NA00999G]
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Metavalent Bonding in Crystalline Solids: How Does It Collapse?
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Tuning the Memory Window of TaOx ReRAM Using the RF Sputtering Power
2021 IEEE International Symposium on Circuits and Systems (ISCAS), DaeguDaegu, Korea, 22 May 2021 - 28 May 2021
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The potential of chemical bonding to design crystallization and vitrification kinetics
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Boron Strengthened GeTe‐Based Alloys for Robust Thermoelectric Devices with High Output Power Density
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Review of Manufacturing Process Defects and Their Effects on Memristive Devices
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Current-limiting amplifier for high speed measurement of resistive switching data
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How to Identify Lone Pairs, Van der Waals Gaps, and Metavalent Bonding Using Charge and Pair Density Methods: From Elemental Chalcogens to Lead Chalcogenides and Phase‐Change Materials
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Exploring Area-Dependent Pr0.7Ca0.3MnO3-Based Memristive Devices as Synapses in Spiking and Artificial Neural Networks
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Nb‐Mediated Grain Growth and Grain‐Boundary Engineering in Mg 3 Sb 2 ‐Based Thermoelectric Materials
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Theory and experimental verification of configurable computing with stochastic memristors
Scientific reports 11(1), 4218 (2021) [10.1038/s41598-021-83382-y]
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Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns
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Tuning electrochemically driven surface transformation in atomically flat LaNiO3 thin films for enhanced water electrolysis
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Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory
IEEE transactions on electron devices 68(3), 1024 - 1030 (2021) [10.1109/TED.2021.3049765]
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Materials Screening for Disorder‐Controlled Chalcogenide Crystals for Phase‐Change Memory Applications
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Metavalent Bonding in Solids: Characteristic Representatives, Their Properties, and Design Options
Physica status solidi / Rapid research letters 15(3), 2000482 (2021) [10.1002/pssr.202000482]
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The importance of singly charged oxygen vacancies for electrical conduction in monoclinic HfO 2
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Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
Advanced electronic materials 7(1), 2000815 (2021) [10.1002/aelm.202000815]
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Discovering Electron‐Transfer‐Driven Changes in Chemical Bonding in Lead Chalcogenides (PbX, where X = Te, Se, S, O)
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HRS Instability in Oxide-Based Bipolar Resistive Switching Cells
IEEE transactions on electron devices 67(10), 4208 - 4215 (2020) [10.1109/TED.2020.3018096]
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In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches
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Phase-Pure Wurtzite GaAs Nanowires Grown by Self-Catalyzed Selective Area Molecular Beam Epitaxy for Advanced Laser Devices and Quantum Disks
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Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement
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Violation of the Stokes–Einstein relation in Ge2Sb2Te5, GeTe, Ag4In3Sb67Te26, and Ge15Sb85, and its connection to fast crystallization
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Exceptionally High Average Power Factor and Thermoelectric Figure of Merit in n-type PbSe by the Dual Incorporation of Cu and Te
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Hard-Gap Spectroscopy in a Self-Defined Mesoscopic InAs/Al Nanowire Josephson Junction
Physical review applied 14(5), 054019 (2020) [10.1103/PhysRevApplied.14.054019]
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Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)
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Picosecond multilevel resistive switching in tantalum oxide thin films
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Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models
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Computational proximity lithography with extreme ultraviolet radiation
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Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications
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Comprehensive model for the electronic transport in Pt/SrTi O 3 analog memristive devices
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Cation diffusion in polycrystalline thin films of monoclinic HfO 2 deposited by atomic layer deposition
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Structural Property Study for GeSn Thin Films
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Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Nature photonics 14(6), 375 (2020) [10.1038/s41566-020-0601-5]
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In situ study of vacancy disordering in crystalline phase-change materials under electron beam irradiation
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Study of the SET switching event of VCM-based memories on a picosecond timescale
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Design of defect-chemical properties and device performance in memristive systems
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Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas
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Control of effective cooling rate upon magnetron sputter deposition ofglassy Ge 15 Te 85
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Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires
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Thermally activated diffusion and lattice relaxation in (Si)GeSn materials
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Chalcogenide Thermoelectrics Empowered by an Unconventional Bonding Mechanism
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Cu Intercalation and Br Doping to Thermoelectric SnSe 2 Lead to Ultrahigh Electron Mobility and Temperature‐Independent Power Factor
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Persistence of spin memory in a crystalline, insulating phase-change material
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Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels
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Switching between Crystallization from the Glassy and the Undercooled Liquid Phase in Phase Change Material Ge 2 Sb 2 Te 5
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Stoichiometry Determination of Chalcogenide Superlattices by Means of X‐Ray Diffraction and its Limits
Physica status solidi / Rapid research letters Rapid research letters [...] 13(4), 1800577 - (2019) [10.1002/pssr.201800577]
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A Quantum‐Mechanical Map for Bonding and Properties in Solids
Advanced materials 31(3), 1806280 - (2019) [10.1002/adma.201806280]
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Phase Change Materials and Superlattices for Non‐Volatile Memories
Physica status solidi / Rapid research letters Rapid research letters [...] 13(4), 1900130 - (2019) [10.1002/pssr.201900130]
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Disorder Control in Crystalline GeSb 2 Te 4 and its Impact on Characteristic Length Scales
Physica status solidi / Rapid research letters Rapid research letters [...] 13(4), 1800578 - (2019) [10.1002/pssr.201800578]
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Role of grain boundaries in Ge–Sb–Te based chalcogenide superlattices
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Direct atomic insight into the role of dopants in phase-change materials
Nature Communications 10(1), 3525 (2019) [10.1038/s41467-019-11506-0]
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Understanding the Structure and Properties of Sesqui‐Chalcogenides (i.e., V 2 VI 3 or Pn 2 Ch 3 (Pn = Pnictogen, Ch = Chalcogen) Compounds) from a Bonding Perspective
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Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO x thin film with x ∼ 1
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Selective area growth and stencil lithography for in situ fabricated quantum devices
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Topotactic Phase Transition Driving Memristive Behavior
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Stateful Three-Input Logic with Memristive Switches
Scientific reports 9(1), 14618 (2019) [10.1038/s41598-019-51039-6]
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Exploiting the switching dynamics of HfO2/TiOx-based ReRAM devices for reliable analogue memristive behaviour
APL materials 7, 091105 (2019) [10.1063/1.5108654]
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Exploiting topological matter for Majorana physics and devices
Solid state electronics 155, 99 - 104 (2019) [10.1016/j.sse.2019.03.005]
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Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters
Solid state electronics 155, 139-143 (2019) [10.1016/j.sse.2019.03.013]
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Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices
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Impact of tensile strain on low Sn content GeSn lasing
Scientific reports 9(1), 259 (2019) [10.1038/s41598-018-36837-8]
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Tailoring Thermoelectric Transport Properties of Ag-Alloyed PbTe: Effects of Microstructure Evolution
ACS applied materials & interfaces 10(45), 38994 - 39001 (2018) [10.1021/acsami.8b15204]
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High-Performance n-Type PbSe–Cu 2 Se Thermoelectrics through Conduction Band Engineering and Phonon Softening
Journal of the American Chemical Society 140(45), 15535 - 15545 (2018) [10.1021/jacs.8b10448]
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Atomic disordering processes in crystalline GeTe induced by ion irradiation
Journal of physics / D Applied physics D 51(49), 495103 - (2018) [10.1088/1361-6463/aae4ae]
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Controlled Crystal Growth of Indium Selenide, In 2 Se 3 , and the Crystal Structures of α-In 2 Se 3
Inorganic chemistry 57(18), 11775 - 11781 (2018) [10.1021/acs.inorgchem.8b01950]
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Thermoelectric Performance of IV-VI Compounds with Octahedral-Like Coordination: A Chemical-Bonding Perspective
Advanced materials 30(33), 1801787 - (2018) [10.1002/adma.201801787]
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Unique Bond Breaking in Crystalline Phase Change Materials and the Quest for Metavalent Bonding
Advanced materials 30(18), 1706735 - (2018) [10.1002/adma.201706735]
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Ag-Segregation to Dislocations in PbTe-Based Thermoelectric Materials
ACS applied materials & interfaces 10(4), 3609 - 3615 (2018) [10.1021/acsami.7b17142]
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2D or Not 2D: Strain Tuning in Weakly Coupled Heterostructures
Advanced functional materials 28(14), 1705901 - (2018) [10.1002/adfm.201705901]
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Incipient Metals: Functional Materials with a Unique Bonding Mechanism
Advanced materials 30(51), 1803777 - (2018) [10.1002/adma.201803777]
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Genesis and Effects of Swapping Bilayers in Hexagonal GeSb 2 Te 4
Chemistry of materials 30(14), 4770 - 4777 (2018) [10.1021/acs.chemmater.8b01900]
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Optoelectronic properties of high-Si-content-Ge 1 −x – y Si x Sn y /Ge 1− x Sn x /Ge 1− x–y Si x Sn y double heterostructure
Semiconductor science and technology 33(12), 124018 - (2018) [10.1088/1361-6641/aaebb5]
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GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers
ACS photonics 5(11), 4628 - 4636 (2018) [10.1021/acsphotonics.8b01116]
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Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO 2 /Ti/Pt Nanosized ReRAM Devices
ACS applied materials & interfaces 10(35), 29766 - 29778 (2018) [10.1021/acsami.8b09068]
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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO 2 /TiO x Bilayer ReRAM Cells
IEEE transactions on electron devices 65(8), 3229 - 3236 (2018) [10.1109/TED.2018.2849872]
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Multi-valued and Fuzzy Logic Realization using TaOx Memristive Devices
Scientific reports 8(1), 8 (2018) [10.1038/s41598-017-18329-3]
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Impact of Pressure on the Resonant Bonding in Chalcogenides
The journal of physical chemistry <Washington, DC> / C C, Nanomaterials and interfaces 121(45), 25447 - 25454 (2017) [10.1021/acs.jpcc.7b07546]
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Phase-change materials for non-volatile photonic applications
Nature photonics 11(8), 465 - 476 (2017) [10.1038/nphoton.2017.126]
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Dielectric properties of amorphous phase-change materials
Physical review / B 95(9), 094111 (2017) [10.1103/PhysRevB.95.094111]
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Strain relaxation and ambipolar electrical transport in GaAs/InSb core–shell nanowires
Nanoscale 9(46), 18392 - 18401 (2017) [10.1039/C7NR05201D]
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Multidimensional Simulation of Threshold Switching in NbO$_{2}$ Based on an Electric Field Triggered Thermal Runaway Model
Advanced electronic materials 2(7), 1600169 - (2016) [10.1002/aelm.201600169]
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Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides
Physical review applied 6(6), 064015 (2016) [10.1103/PhysRevApplied.6.064015]
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Nonlinearity analysis of TaOX redox-based RRAM
Microelectronic engineering 154, 38 - 41 (2016) [10.1016/j.mee.2016.01.025]
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Impact of oxygen exchange reaction at the ohmic interface in Ta$_{2}$ O$_{5}$ -based ReRAM devices
Nanoscale 8(41), 17774 - 17781 (2016) [10.1039/C6NR03810G]
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Realization of Minimum and Maximum Gate Function in Ta$_{2}$O$_{5}$-based Memristive Devices
Scientific reports 6, 23967 - (2016) [10.1038/srep23967]
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A HfO 2 -Based Complementary Switching Crossbar Adder
Advanced Electronic Materials 1(10), n/a - n/a (2015) [10.1002/aelm.201500138]
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Phase-Change and Redox-Based Resistive Switching Memories
Proceedings of the IEEE 103(8), 1274 - 1288 (2015) [10.1109/JPROC.2015.2433311]
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Resistively Switching Chalcogenides
Advanced functional materials 25(40), 6285 - 6286 (2015) [10.1002/adfm.201503288]
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