Modeling and simulation of novel electronic devices
About
The research group “Modeling and simulation of electronic devices” develops simulation models Ranging from atomistic methods (DFT-NEGF, DFT, or MD) over Kinetic Monte Carlo models, to continuum models and compact models to be used in circuit simulators. The focus is the development of model memristive devices such as VCM, ECM, or PCM cells in close interaction with colleagues working on the experimental characterization and fabrication. A special focus lies on understanding the switching dynamics of memristive devices as this is detrimental for employing memristive devices in applications such as computation-in-memory. The insights of the simulation studies lead to optimized device concepts such as thermally engineered stacks. Within the group small building blocks for memristive computing have been developed/fabricated and electrical validated, such as memristive adder circuits, multinary logic, or cells of cellular neural networks.
Research Topics
- Modelling and Simulation of ReRAM devices
- Development of memristive cellular nonlinear networks
- Investigation of spatio-temporal correlations in memristive crossbar arrays for unsupervised learning schemes
- System-technology co-optimization for computing-in-memory schemes using novel electronic devices
Members
Daniel SchönResearch Assistent
Modeling and simulation of novel electronic devices (AG Menzel)Building IWE2-RWTH-Aachen / Room B 005a+49 241/80-27829
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Last Modified: 22.04.2025