Novel Electronic Device Integration

About

The research group specializes in next-generation non-volatile memory for logic-in-memory computation and storage, with a focus on RRAM integration at the backend of advanced CMOS technology. By harnessing logic in-memory computing, we strive to minimize data movement and enhance computational efficiency. Through innovative materials and device engineering, we address RRAM reliability and variability challenges while assessing their impact on system-level performance. Combining expertise in materials science, electrical engineering, and computer architecture, our interdisciplinary team is dedicated to shaping the future of memory and computing technologies.

Research Topics

  • RRAM integration at the backend of advanced CMOS processes
  • Development of high entropy oxides for RRAM applications
  • Memristive cellular nonlinear networks with 1T-1R arrays
  • Logic in-memory computing with 1T-1R arrays

Contact

Dr. Vikas Rana

PGI-7

Building 04.6 / Room R 22

+49 2461/61-6074

E-Mail
Members
Simranjeet SinghPostdoctoral Researcher - Mem²CNNBuilding 04.6 / Room 22+49 2461/61-6074
Mr Ankit BendeDoctoral ResearcherBuilding 04.8 / Room 49b+49 2461/61-4015
Godwin PaulDoctoral ResearcherBuilding 04.6 / Room 49b+49 2461/61-4015
Lukas HeinenNoneBuilding 04.6 / Room 49a+49 2461/61-6479
Tom Glint IssacNoneBuilding 04.6 / Room 49b+49 2461/61-4015

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Last Modified: 24.03.2025
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