100keV; up to 150 mm wafer; overlay 10nm (2σ) (with optimal markers); Feature resolution limit ~10nm, pitch resolution limit ~30nm, resolution depends strongly on resist, substrate and pattern

100keV; up to 200 mm wafer; overlay 10nm (2σ) (with optimal markers); Feature resolution limit ~10nm, pitch resolution limit ~30nm, resolution depends strongly on resist, substrate and pattern

front and back side alignment, MFS ≈ 0.3µm, overlay 0.25µm, lamp: 1 kW (Hg), max. sample size 200 mm

front side alignment, MFS ≈ 1µm, overlay < 0.5µm, lamp: 350 W (Hg), max. sample size 100 mm

front and back side alignment, grayscale exposure mode, laser: 375 nm, MFS > 0.6µm, overlay < 0.5µm, max. sample size 200 mm

front side alignment, laser: 365 nm, MFS ≈ 1µm, overlay < 1µm, max. sample size 150 mm

front side alignment, laser: 365 nm, MFS ≈ 1µm, overlay < 1µm, max. sample size 200 mm, high aspect ratio feature

front and back side alignment, laser: 365 nm, MFS ≈ 0.6µm, overlay < 0.5µm, max. sample size 200 mm

tip mode: [MFS > 15nm, overlay 25nm, gray scale possible]; laser mode: [MFS > 0.6µm, overlay 100 nm]; max. sample size 200 mm, max. write field 60x60µm2

xy-res. > 0.5µm, z-res. > 1µm, max print volume 100 mm3, max. object height 8 mm

thermal and UV imprint, max. 200°C and 600psi, MFS ≈ 20 nm, max. sample size 100 mm

• III/V-line
• Up to 100 mm
• Loadlock
• Gas species: Ar, O2, SF6, CHF3, CF4, Cl2, BCl3, CH4, H2, N2O
• Wide Temperature Range Electrode (-150°C to +400°C)
• Cryo process
• EPD-OES

• Si-line
• Up to 100 mm
• Loadlock
• Gas species: Ar, O2, SF6, CHF3, CF4, HBr, Cl2, BCl3, CH4, H2, C4F8
• Wide Temperature Range Electrode (-150°C to +400°C)
• Bosch and Cryo process for deep silicon etching
• EPD-OES

• All HNF Materials excluding Cu
• Up to 150 mm
• Gas species: Ar, O2, CF4
• Resist stripping

• Cu Line
• Up to 100 mm
• Gas species: Ar, O2
• Resist stripping
• Cooling Plate

• Si-line
• Up to 150 mm,
• Gas species: Ar, O2, CF4
• Resist stripping

• Si-line
• Up to 100mm
• Loadlock
• Gas species: Ar, O2, SF6, CHF3, CF4, Cl2
• Wide Temperature Range Electrode (-150°C to +400°C)
• Cryo process

• Up to 200mm (5" Mask)
• Si-line,
• Loadlock,
• Gas species: Ar, O2, HBr, Cl2, BCl3, SF6, CHF3

• III/V-line
• Up to 100 mm
• Loadlock
• Gas species: Ar, O2, SF6, CHF3, Cl2, BCl3, CH4, H2
• EPD-LI

• BioHybrid-line
• Up to 100 mm
• Loadlock
• Gas species: Ar, O2, SF6, CHF3, CF4, C4F8
• Wide Temperature Range Electrode (-150°C to +400°C)
• Bosch and Cryo process for deep silicon etching
• EPD LI

• BioHybrid-line
• Up to 100 mm
• Loadlock,
• Gas species: Ar, O2, CF4, HBr, Cl2
• Wide Temperature Range Electrode (-150°C to +400°C)

• HF Vapor Etch
• up to 100mm

Up to 100mm, load lock, BioHybrid-line, Deposition of TaOx, Al2O3, TiO2 and TiN

Up to 100mm, load lock, Si-line, Deposition of SiO2 and Al2O3

Up to 200mm, Si-line, deposition of low stress SiN, stochiometric SiN and TEOS

1 x 100 mm via load lock, 1 x 150mm via main chamber; Ar-cleaning in load lock, 6 crucibles

Up to 100mm, substrate temperature up to 800°C, single and co-sputtering, Ti; TiN; Nb; NbN; NbTiN; Al; AlN; Pt; Au

Up to 200 mm, CMOS only, DC/RF-Sputtering, Al; Nb; NbN; Ti; TiN; Ta; Ni

Up to 200 mm, load lock,BioHybrid-line, deposition of SiO2, SiNx at 100°C to 280°C

Up to 200 mm, load lock, Si-line, deposition of SiO2, SiNx at 200°C to 350°C; LF- and RF-plasma nodes

Up to 6 x 150 mm, load lock, Ar - Cleaning, 8 crucibles, BioHybrid-line

Up to 100 mm, Ar-Cleaning in load lock, 8 crucibles

Wafer- Sample dicing

Si, Ge, up to 200 mm and thickness of 1.5 mm, no II/V-materials, 2" spindle

Wafer-/Sample dicing

Glass (ultra sonic), Al2O3, SiC, Si, LaAlO3, SrTiO3 (w/o US), up to 200 mm and thickness of 1.5 mm, no II/V-materials, 2" spindle

High precision scribing for defined cutting of structured Wafer / samples

Up to 100 mm, for GaAs, Si, Ge

Wet bench workplace for wafer-processing (up to 200mm) with solvents.

Wet bench workplaces for wafer-processing (up to 200mm) for Biohybrid applications including solvent processing, spin coating, development, etc.

Wet bench workplaces for wafer-processing (up to 150mm) for Biohybrid applications including solvent processing, spin coating, development, etc.

Wet bench workplaces for wafer-processing (up to 200mm) for CMOS (Si-based) applications including RCA, solvent processing, spin coating, development, etc.

Semi-automatic spin coater (up to 200mm) / wetbench for solvent processing

Two wet benches processing Neurotec samples (up to 150mm) solvent processing, spin coating, development, etc.

critical point dryer, up to 2,5"

Up to 200mm, Dry and wet oxidation at 800°C – 1050°C

Up to 150 mm, wet and dry thermal oxidation of Si, 800°C-1050°C

Up to 150 mm, Annealing and dry thermal oxidation of Si, 450°C -1050°C

Up to 150 mm, Annealing and dry thermal oxidation of Si, 450°C -1050°C

Rapid Thermal Processing, III/V-line, Gas Species: N2, H2, O2, Ar, max 1000°C, up to 150 mm

Rapid Thermal Processing, BioHybrid-line, Gas Species: N2, H2, O2, Ar, max. 1000°C, up to 150 mm

Rapid Thermal Processing, Si-line, Gas Species: N2, H2, O2, Ar, max. 1200°C, vacuum processing, up to 150 mm

Nanoscale surface topography; Nanoscale Height & Roughness; Programmable for multi-site measurements;

X-Y Scan Range: 100µm x 100µm, Vertical Range: 10µm; 150mm x 150mm inspectable area

3D-Scans/surface topography; Height & Roughness; Overlay; Magnification: up tp 100x; up to 8 inch Wafer

Surface profiler

2 nm vertical resolution

Mapping profiler

2 nm vertical resolution

Up to 100 mm, mapping, 3D imaging

Up to 100 mm, mapping

Fast spectroscopic ellipsometer

Up to 300mm, mapping; Spectral range from 300nm to 850nm;

optical microscope

Episcopic/diascopic; brightfield/darkfield; polarisingfilter + DIC; div. magnfications up to 150x; up to 200mm

Episcopic/diascopic; brightfield/darkfield; polarisingfilter + DIC; div. magnfications up to x150x; up to 200mm

Keithley 4200 with probestation MPI-TS200

electrical parameter analyser, DC-IV range 0.2µV to 20V, DC current 100fA to 100mA; CV: 1kHz-10MHz 1V AC drive; 1aF, 1nS,0.001degree

High resoluition SEM, Oxford Instruments X-Max 80 mm² EDX detector, AZtec 5.0

Focused Ion Beam and EBID, Pt-GIS, Easylift, Leica VCT 100 Cryo-Transfer System, AutoTEM 4, AutoScript

General purpose SEM

General purpose SEM

4 x Kleindiek MM3A-EM Micromanipulators

General purpose SEM