List of devices

An up-to-date equipment list and data such as location and tool owners is available within the PPMS Booking Tool

Process

Tool

Description

Electron-Beam Lithography

Vistec EBPG 5000+

Service only

100keV, up to 150 mm, res. > 15 nm, overlay 0.5 nm +/- 2.5 nm

 

Raith EBPG 5200

Service only

100keV, up to 200 mm, res. > 10 nm, overlay 0.5 nm +/- 2.5 nm

Aligner Lithography

Süss MJB4

front side alignment, MFS ≈ 1 micron, overlay < 0.5 micron, lamp: 350 W (Hg), max. sample size 100 mm

 

Süss MA8/BA8

front and back side alignment, MFS ≈ 0.3 micron, overlay 0.25 micron, lamp: 1 kW (Hg), max. sample size 200 mm

 

Süss MA6

front side alignment, MFS ≈ 1 micron, overlay ≈ 1 micron, lamp: 350 W (Hg), max. sample size 100 mm

Maskless Lithography

Heidelberg Instruments DWL 66+

front and back side alignment, grayscale exposure mode, laser: 375 nm, MFS > 0.6 micron, overlay < 0.5 micron, max. sample size 200 mm

 

Heidelberg Instruments MLA 100

front side alignment, laser: 365 nm, MFS ≈ 1 micron, overlay < 1 micron, max. sample size 150 mm

Heidelberg Instruments MLA 100

coming June 2022

front side alignment, laser: 365 nm, MFS ≈ 1 micron, overlay < 1 micron, max. sample size 200 mm

 

Heidelberg Instruments NanoFrazor Explore

tip mode: [MFS > 15 nm, overlay 25 nm, gray scale possible]; laser mode: [MFS > 0.6 micron, overlay 100 nm]; max. sample size 200 mm, max. write field 60x60 micron2

3D Printer

Nanoscribe Photonic Professional GT2

xy-res. > 0.5 micron, z-res. > 1 micron, max print volume 100 mm3, max. object height 8 mm

Nano-Imprint

Nanonex NX 2000

MFS ≈ 30 nm, overlay (via Süss MA6) ≈ 1 micron, max. sample size 100 mm

Dry Etching

Oxford PLS 100 Cluster tool

Up to 150 mm, load lock, only CMOS
Chamber 1: RIE,
Gas species: Ar, O2, SF6, CHF3, CF4
Chamber 2: ICP
Gas species: Ar, O2, HBr, Cl2

 

Oxford PLS 100 Cluster tool

Up to 200 mm, load lock, only CMOS
Chamber 1: ICP, Gas species: Ar, O2, SF6, CHF3, CF4
Chamber 2: ICP, Gas species: Ar, O2, HBr, Cl2

 

Oxford PL 100 / ICP

Up to 150 mm, load-lock,

Gas species: Ar;O2;CF4;Cl2;HBr;CH4;BCL3

 

Oxford PL 100 / ICP

Up to 150 mm, Load lock, only Si-based materials,

Gas species: Ar, O2, H2, SF6, CHF3, Cl2

Bosch and Cryo process for deep silicon etching …

 

Oxford PL 100 / ICP

Up to 150 mm, load lock, Gas species: Ar, O2, CF4, Cl2, HBr

Oxford RIE/ALE

Up to 200 mm, load lock, III/V

Gas species: Ar;O2;SF6;CHF3;CF4;CL2;H2;BCl3;CH4;He

Oxford RIE/ALE

Up to 200 mm, load lock, only CMOS

Gas species: Ar;O2;SF6;CHF3;CF4;HBr;CL2;H2;C4F8;CH4;He

TePla Gigabatch 360

Resist stripping, N2, O2, CF4, up to 150 mm

 

TePla Gigabatch 360

Coming May 2022

Resist stripping, N2, O2, CF4, up to 150 mm

Deposition

Balzers PLS 500

Service only

Up to 3 x 100 mm, load lock, Ar-cleaning in load lock, 6 crucibles, different metals

 

Balzer PLS 570

Service only

Up to 5 x 150 mm, load lock, Ar - Cleaning, 6 crucibles, metals: Al, Au,Ti, Pt, Ag, Cr, for bio-inspired systems

 

Leybold Univex 400

Service only

Up to 100 mm, Ar-Cleaning in load lock, 8 crucibles

 

Oerlikon EVO 2

Up to 200 mm, CMOS only, DC/RF-Sputtering, three sources parallel, Al, Ti, TiN, Ta, Ni, TaN, insulators

 

Oxford PLS 100 PECVD

up to 200 mm, load lock, SiO2, SiNx, LR- and RF-plasma nodes

 

Sentech PECVD

Up to 200 mm, load lock, SiO2, SiNx, low temperature deposition (100oC < T > 350oC)

 

Aixtron Tricent Cluster CVD

Service only

SiGe epitaxy for 300 mm

 

Aixtron Tricent Cluster CVD

Service only

SiGeSn epitaxy for 300 mm

 

Aixtron Tricent Cluster ALD

Service only

High-k, HfO2, Al2O3, HfyAl(1-y)Ox, for wafers 300 mm, 200 mm, 100 mm'; pieces 19,5 x 19,5 mm

 

Aixtron Tricent Cluster AVD

Service only

Metal gate AVD, TiN, TaN, for wafers 300 mm, 200 mm, 100 mm'; pieces 19,5 x 19,5 mm

Centrotherm LPCVD

Service only

Coming March 2022

FHR Sputter

Service only

4”, for III/V, substrate temperatur up to 800oC, single and co-sputtering, TiN;TiAlN;Nb;Pt;Al

 

Oxford ALD

TaOx, Al2O3, for Si with Au, up to 150 mm

Oxford ALD

Oxides für Quantum devices

Dicing

Disco DAD3350

Service only

Si, glass, Al2O3, ceramics, up to 200 mm and thickness of 1.5 mm, no II/V-materials, 2" spindle – only in service

 

Disco DAD3350

Service only

Si, glass, Al2O3, ceramics, up to 200 mm and thickness of 1.5 mm, no II/V-materials, 2" spindle – only in service

 

Süss Scriber

Up to 100 mm, for GaAs-

Wet Benches

Full wet bench line for Si processing

Wet benches for Preclean, Cleaning S1/S2, RCA, Resist coating (incl. HDMS), Development, Solvents, Lift off, wet etching, up to 200 mm

 

Full wet bench line for III/V processing

Wet benches for Preclean, Cleaning, Resist coating (incl. HDMS), Development, Solvents, Lift off, wet etching, up to 150 mm

 

Full wet bench line for Biohybrids and not semiconductor materials

Wet benches for Preclean, Cleaning, Resist coating (incl. HDMS), Development, Solvents, Lift off, wet etching, up to 200 mm

 

Four Wet benches for Precleaning and Etching of "special materials"

Two benches for cleaning and etching with acids and bases, two wet benches for handling solvents, up to 200 mm

 

Wet bench mask making chrom masks

Two wet benches for developing and etching chrom masks, up to 200 mm

Süss RCD-8 + Wet bench for development

Service only

Semi-automatic spinner, up to 200 mm

Wafer Cleaner

SSEC wafer cleaner Si-Based 1 reactor

up to 150 mm

 

Semitool wafer cleaner

2 reactors for 200 mm and 2 reactors for 300 mm, CMOs only

 

Semisolar mask cleaner 5"

for mask up to 5”

CPD critical point dryer

Tousimis 931 series

up to 2,5"

Implanter

Axcelis Optima

Service only

Up to 300mm, 200ev-60Kev, B, BF2, P, As, Si, H, H2, only Si

 

Axelis 8250

Service only

Up to 150 mm, 1 KeV- 250 KeV B, BF2, P, As, Si, H,

 

Eaton NV 3204

Service only

Up to 100 mm, 20-200 KeV

Thermal processing

UniTemp RTP 150

Rapid Thermal Processing for Si, SiGe,etc. Gas Species: N2, H2, O2, Ar, max 1000oC, up to 100 mm

 

UniTemp RTP 150

Rapid Thermal Processing for III/V, Gas Species: N2, H2, O2, Ar, max 1000oC, up to 150 mm

 

UniTemp RTP 150

coming in Mai 2022

 

Tempress horizontal furnace

Service only

Wet and dry thermal oxidation of Si, up to 100 mm, 800 - 1100oC

 

Tempress horizontal furnace

Service only

Wet and dry thermal oxidation of silicon and metals, up to 100 mm, 450 - 1100oC

 

Tempress horizontal furnace

Service only

Dry thermal oxidation of Si, up to 100 mm, 800 - 1100oC

 

Mattson ST 2000

Service only

Rapid thermal Processing for Si, Gas species: N2O, O2, H2, Ar, N2, max 1050oC, for 150 mm Si

 

Centrotherm CLV, vertical furnace

up to 200 mm, Gas species: N2, N2O, H2, O2, DCE, max 1050oC

 

Centrotherm CLV, vertical furnace

up to 200 mm, Gas species: N2, H2, O2, DCE, max 1050oC

Analytic

FEI Magellan, scanning electron microscope

Service only

High resoluition SEM for electron energies below 5 KeV, Energy dispersive X-rax analasis

 

FEI Helios FIB + EBID

Focused Ion Beam, EBID for PT, Au, SiO2, Ir, Cryo stage for biological applications

 

Zeiss 1550 Scanning Electron Microscope

General purpose SEM, Gemini column, up to 30keV

 

Zeiss 1550 VP Scanning Electron Microscope

General purpose SEM, Gemini column, up to 30keV

 

Zeiss Sigma 300 with 4 Nano-Manipulators

General purpose SEM, Gemini column, up to 30keV

 

SenTech SE800 spectroscopic ellipsometer

Up to 300 mm, mapping

 

Accurion nanofilm RSE, fast spectroscopic ellipsometer

Up to 100 mm, mapping

 

Accurion nanofilm EP4, imaging ellipsometer

Up to 100 mm, mapping

 

Bruker Dektak 150, Surface profiler

2 nm vertical resolution

 

Bruker Dektak XT, mapping profiler

2 nm vertical resolution

 

Bruker AFM

up to 100 mm

 

RBS Tandetron

Service only

H+ up to 3,1 MeV, He++ up to 5,1 MeV

 

Leitz INM 100 Microscope

optical microscope

 

Leitz INM 300 Microscope

UV- optical microscope

 

Confovis Confocal Mikroscope

wafer inspect

Last Modified: 08.06.2022