Dislocation Behavior in Semiconductors
We study the dislocation behaviour in semiconductor materials by applying the Continuum Dislocation Dynamics theory. We investigate the dislocation structures in SiC and use this data to benchmark the validity and predictive capabilities of the Alexander-Haasen model. This will allow us to analyse and identify the relevant participating glide systems. We also investigate the motion of dislocations during the cooling and, in general, during time-dependent temperature influence (e.g. heating, T holding, cooling) together with the interaction and movement of dislocation in SiC. Furthermore, we investigate how and in which cases cooling leads to the formation of cell structures or general dislocation patterns. We can then develop methods that can be used to produce a certain material with fewer dislocations.