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47th IFF Spring School


Memristive Phenomena -
From Fundamental Physics to Neuromorphic Computing

22 February – 04 March 2016 in Jülich, Germany



Memristive phenomena combine the functionalities of electronic resistance and data memory in solid-state elements, which are able to change their resistance as a result of electrical stimulation in a non-volatile fashion. In nanoelectronics, this functionality can be used for information storage and unconventional logic, as well as neuromorphic computing concepts that are aimed at mimicking the operation of the human brain.

A multitude of fascinating memristive phenomena has emerged over the past two decades. These phenomena typically occur in oxides and higher chalcogenides and are one of the hottest topics in current solid-state research, comprising unusual phase transitions, spintronic and multiferroic tunneling effects, as well as nanoscale redox processes by local ion motion. They involve electron correlation, quantum point contact effects and exotic conformation changes at the atomic level.