Electronic properties of interfaces & surfaces
Our working group explores electronic and magnetic properties at surfaces and interfaces using a correlative approach. We employ advanced methods such as off-axis electron holography in TEM, scanning tunneling microscopy and spectroscopy, atomic force microscopy, and simulations of tunnel spectroscopy and electron optical phase maps. Our research focuses on polarization changes in nitride semiconductor heterointerfaces, oxides, and metal-organic halide perovskites under operating conditions.
Our research topics:
- Mapping electronic and magnetic properties at surfaces and interfaces
- Characterization of polarization changes at nitride semiconductor heterointerfaces
- Investigation of metal organic halide perovskites under operating conditions
- Simulation of tunnel spectra under non-equlibrium conditions
- Physics of point defects and related in-gap states in III-V semiconductors
- Quantitative measurement and understanding of surface Fermi-level pinning
- Electrical and structural charaterization of ternary III-V nanowires
- FIB-induced carbon implantation at nitride semiconductor surfaces and its implications on pinning levels
points of contact
Dr. Michael Schnedler
Scientific staff at ER-C-1
- er-c
- er-c-1
Room 98
Publications of the group
[1] L. Freter, L. Lymperakis, M. Schnedler, H. Eisele, L. Jin, J. Liu, Q. Sun, R. E. Dunin-Borkowski, Ph. Ebert: Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces. J. Vac. Sci. Technol. A 42, 023202 (2024)
[2] K. Ji, M. Schnedler, Q. Lan, J.-F. Carlin, R. Butté, N. Grandjean, R.E. Dunin-Borkowski, Ph. Ebert: Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN. Ultramicroscopy 264, 114006 (2024)
[3] K. Ji, M. Schnedler, Q. Lan, F. Zheng, Y. Wang, Y. Lu, H. Eisele, J.-F. Carlin, R. Butté, N. Grandjean, R. E. Dunin-Borkowski, and Ph. Ebert: Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography. Appl. Phys. Express 17, 016505 (2024)
[4] Q. Lan, M. Schnedler, L. Freter, C. Wang, K. Fischer, Ph. Ebert, and R. E. Dunin-Borkowski: Electrostatic extension of magnetic proximity effect in La0.7Sr0.3MnO3, Phys. Rev. B 108, Letter L180410 (2023)
[5] D. S. Rosenzweig, M. Schnedler, R. E. Dunin-Borkowski, Ph. Ebert, H. Eisele: Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets. J. Vac. Sci. Technol. B 41, 044202 (2023)
[6] L. Freter, H.-C. Hsu, R. Sankar, C.-W. Chen, R. E. Dunin-Borkowski, Ph. Ebert, Y.-P. Chiu, M. Schnedler, Interplay of field-induced molecular dipole alignment and compensating surface polarization in low-temperature P-V hysteresis of MAPbBr3(001), Phys. Rev. Mat. Lett. 7, L052401 (2023)
[7] D. S. Rosenzweig, M. N. L. Hansemann, M. Schnedler, Ph. Ebert, H. Eisele, Atomically resolved study of initial stages of hydrogen etching and adsorption on GaAs(110), Phys. Rev. Mat. 6, 124603 (2022)
[8] D. S. Rosenzweig, M. N. L. Hansemann, Ph. Ebert, M. Schnedler, H. Eisele, GaAs(110) Surface Modifications Introduced by Hydrogen, 2022 Comp. Semicon. Week (CSW) 1-2 (2022)
[9] Y. Lu, F. Zheng, Q.Lan, M. Schnedler, Ph. Ebert, R. E. Dunin-Borkowski, Counting Point Defects at Nanoparticle Surfaces by Electron Holography, Nano Lett. 22, 6936–6941 (2022)
[10] Q. Lan, C. Wang, L. Jin, M. Schnedler, L. Freter, K. Fischer, J. Caron, X. Wei, T. Denneulin, A. Kovacs, Ph. Ebert, X. Y. Zhong, R. E. Dunin-Borkowski, Electrostatic Shaping of Magnetic Transition Regions in La0.7Sr0.3MnO3, Phys. Rev. Lett. 129, 057201 (2022)