High Oxygen Pressure Sputtering (HOPS)

High Oxygen Pressure Sputtering (HOPS) is based on radio frequency (RF) of 13.6 MHz. The main advantage of HOPS is the high deposition oxygen pressure of 1-3 mbar, which ensures the stoichiometric growth of different oxides and prevents oxygen deficiencies. HOPS allows a growth temperature up to 1300K with an automatic tunable plasma generator to ignite an oxygen plasma between the target and the substrate electrode. The sputtering rate of oxide thin films is about 0.03 Å/s.

Location: Geb. Nr. 4.6, Room No.: A 65, Ph: 5808