Electron spectroscopy

We develop high-intensity and high-resolution electron sources to study collective charge modes in model materials that are relevant for topological quantum computing. We also establish new approaches for the epitaxial growth of 2D materials.

Investigator: Dr. François C. Bocquet

Dr. Francois Posseik

Monochromatized electron source

Monochromatized electron source

A new electron source for the parallel acquisition of high-resolution electron energy loss spectra.

Graphene

Graphene

We develop new approaches to obtain high-quality graphene, grown epitaxially on silicon carbide, a wide band gap semiconductor. In particular, we try to realize wafer-size samples with unconventional twist angles.

Chemically-resolved vertical structures with sub-Angstrom resolution

Chemically-resolved vertical structures with sub-Angstrom resolution

We employ and develop the normal incidence x-ray standing wave technique (NIXSW) to study interfaces between molecular layers and their substrates, and also (internal) interfaces of two-dimensional materials.