Novel Group IV Alloys for Advanced Optoelectronic Components (e.g. GeSn based Laser and Detectors)

TO-121 • PT 1.2657 • As of 10/2023
Peter Grünberg Institute
Semiconductor Nanoelectronics (PGI-9)

Technology

The technology is based on a process that provides novel semiconductor alloys for advanced optoelectronic components. The process refers to Forschungszentrum Jülich’s innovative and patented method for the monolithic deposition of monocrystalline group IV-IV layers by depositing particularly binary crystals of GeSn. These crystals illuminate as a result of a direct electronic band transition during excitation, for example by applying a voltage or by coupling light in the visible, infrared or ultraviolet light. This effect can finally be used for a wide range of applications.

Problem addressed

Many organic molecules, but also various compounds with C-O groups show strong absorption lines in mid-infrared light. However, the corresponding emission wavelength range of 2,5 - 6 µm is only reached by a few optically active materials which demand a suitable small direct band gap. Although the successful coverage of this wavelength range has already been achieved with interband cascade lasers as well as with conventional III-V semiconductors as InSb, these are either very expensive or they typically contain toxic heavy metals like mercury or lead.

Solution

The novel process for GeSn based components is significantly more cost-effective than previous methods and is also advantageous from an environmental point of view. Therefore, the solution circumvents the problems described above and at the same time offers the desired wavelength range properties. The innovative and patented epitaxy process delivers GeSn alloys far above the normal Sn solubility limit. As these alloys are characterized by their extremely small effective masses of the charge carriers, they are opening up a great potential to drastically expand the functionality of conventional group IV based microelectronics.

Benefits and Potential Use

light emission range of 2,5 - 4,5 µm, i.e. in the transition region between NIR and MIR, is promising for various applications in environmental and medical technology, since many C-O containing compounds show strong absorption lines. In this field, some very capable components have already been made available in the form of initial prototypes. These demonstrate the wide range of applications in the relevant fields of Si-Photonics, Neuromorphic Computing (NC), high-frequency nanoelectronics and possibly cancer detection. In addition to these complex fields of application, simpler applications have already been demonstrated, e.g. the measurement of liquid levels in filling plants or alcohol concentration measurements in passenger compartments.

Development Status and Next Steps

Forschungszentrum Jülich has extensive expertise in this field and holds several patents. The technology described above has already been initially verified through prototypes and is continuously being developed further. The Peter Grünberg Institute (PGI-9) – Semiconductor Nanoelectronics – already cooperates with numerous national and international companies and scientific partners. Forschungszentrum Jülich focuses on energy and cost-efficient devices, suitable for various emerging technologies. We are continuously seeking for cooperation partners and/or licensees in this and adjacent areas of research and applications.

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